18466289. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Donghoon Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18466289 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a first semiconductor structure with circuit elements on a first substrate, a lower interconnection structure connected to the circuit elements, and a peripheral region insulating layer. The device also includes a second semiconductor structure with a second substrate on the first substrate, a first stack structure with first and second gate electrodes, interlayer insulating layers, contact plugs, and contact plug insulating layers.
- Explanation of the patent:
- First semiconductor structure with circuit elements and interconnection structure - Second semiconductor structure with gate electrodes, interlayer insulating layers, contact plugs, and contact plug insulating layers - Capacitor structure within the second semiconductor structure
Potential applications of this technology: - Advanced semiconductor devices - Integrated circuits - Memory devices
Problems solved by this technology: - Improved performance and functionality of semiconductor devices - Enhanced integration of circuit elements - Better insulation and connectivity within the device
Benefits of this technology: - Higher efficiency and speed in electronic devices - Increased capacity and reliability of memory storage - Enhanced overall performance of semiconductor devices
Potential commercial applications of this technology: - Semiconductor manufacturing industry - Electronics and consumer electronics sector - Research and development in semiconductor technology
Possible prior art: - Previous patents related to semiconductor device structures - Existing technologies for interconnection and insulation in semiconductor devices
Unanswered questions: 1. How does the integration of the first and second semiconductor structures impact the overall performance of the device? 2. What specific advancements in semiconductor technology does this patent offer compared to existing solutions?
Original Abstract Submitted
A semiconductor device includes a first semiconductor structure including circuit elements on a first substrate, a lower interconnection structure connected to the circuit elements, and a peripheral region insulating layer covering the circuit elements; and a second semiconductor structure including a second substrate on the first substrate, a first stack structure including first and second gate electrodes spaced apart from each other and stacked on the second substrate, interlayer insulating layers alternately stacked with the first and second gate electrodes, first and second contact plugs passing through the first and second gate electrodes, and contact plug insulating layers alternately disposed with the interlayer insulating layers and surrounding the contact plugs. The second semiconductor structure includes a first capacitor structure including the first gate electrode, a contact plug insulating layer(s), and the second contact plug, or the second gate electrode, a contact plug insulating layer(s), and the first contact plug.
