18463417. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT
Organization Name
Inventor(s)
Gilberto Curatola of Nuremberg (DE)
FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463417 titled 'FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT
Simplified Explanation
The patent application describes a field effect transistor that improves its gate voltage-withstand capability and breakdown capability by replacing a gate metal/pGaN Schottky diode with an nGaN/pGaN reverse bias diode. The P-type gallium nitride layer and N-type gallium nitride layer are stacked to form the gate structure.
- The gate structure of the field effect transistor includes a P-type gallium nitride layer and an N-type gallium nitride layer stacked together.
- The replacement of the gate metal/pGaN Schottky diode with an nGaN/pGaN reverse bias diode improves the gate voltage-withstand capability and breakdown capability of the transistor.
- The doping density of the P-type gallium nitride layer is between 1×10^17 cm^-3 and 1×10^19 cm^-3 to reduce charge storage effect during device operation and improve operating threshold voltage stability.
Potential Applications
This technology can be applied in various electronic devices that use field effect transistors, such as:
- Power amplifiers
- Switching devices
- RF transmitters
- High-frequency applications
Problems Solved
The technology addresses the following problems:
- Limited gate voltage-withstand capability of field effect transistors
- Limited breakdown capability of field effect transistors
- Charge storage effect during device operation leading to instability in operating threshold voltage
Benefits
The technology offers the following benefits:
- Improved gate voltage-withstand capability of field effect transistors
- Improved breakdown capability of field effect transistors
- Reduced charge storage effect during device operation
- Enhanced operating threshold voltage stability
Original Abstract Submitted
A field effect transistor includes a channel layer, a source, a drain, a gate structure, and a gate metal layer; and the gate structure includes a P-type gallium nitride layer and an N-type gallium nitride layer that are disposed in a stacking manner, so that a gate metal/pGaN Schottky diode is replaced with an nGaN/pGaN reverse bias diode, to improve a gate voltage-withstand capability of the field effect transistor, thereby improving a breakdown capability of the field effect transistor. A doping density of the P-type gallium nitride layer is between 1×10cmand 1×10cm, so that a charge storage effect during operation of a device can be reduced, carriers at the pGaN layer can be exhausted as much as possible, and redundant-charge storage is avoided, thereby improving operating threshold voltage stability of the device.
