18462394. CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18462394 titled 'CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE
Simplified Explanation
The capacitor structure described in the abstract consists of a lower electrode structure on a substrate, a dielectric pattern on the sidewall of the lower electrode structure, and an upper electrode on the dielectric pattern.
- Lower electrode structure includes an oxide of a first metal with 4 valence electrons, doped with a second metal with 3, 5, 6, or 7 valence electrons.
- Dielectric pattern is positioned on the sidewall of the lower electrode structure.
- Upper electrode is placed on the sidewall of the dielectric pattern.
Potential Applications
The technology described in this patent application could be applied in various electronic devices such as capacitors, memory devices, and integrated circuits.
Problems Solved
This technology addresses the need for improved capacitor structures with enhanced performance and reliability in electronic devices.
Benefits
The benefits of this technology include increased efficiency, higher capacitance, improved stability, and reduced leakage in capacitor structures.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the use of different metal oxides and dopants in capacitor structures to enhance their performance and characteristics.
Unanswered Questions
How does this technology compare to existing capacitor structures in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing capacitor structures.
What are the specific electronic devices that could benefit the most from this technology?
The article does not specify the particular electronic devices that could see the most significant improvements from implementing this technology.
Original Abstract Submitted
A capacitor structure includes a lower electrode structure disposed on a substrate, including an oxide of a first metal having 4 valence electrons, and being doped with a second metal having 3, 5, 6, or 7 valence electrons, a dielectric pattern disposed on a sidewall of the lower electrode structure, and an upper electrode disposed on a sidewall of the dielectric pattern.
