18458284. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kotaro Nomura of Yokkaichi (JP)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18458284 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes two regions, each with a stack and a pillar, containing insulating films and conductive films. The second region's stack includes insulating films with nitrogen and at least one of oxygen or hydrogen.
- The first region of the memory device includes a first stack with insulating films containing oxygen and conductive films, along with a first pillar made of a semiconductor layer.
- The second region of the memory device includes a second stack with insulating films containing nitrogen, as well as insulating films with nitrogen and at least one of oxygen or hydrogen, and a second pillar made of a semiconductor layer.
- The first and second regions are adjacent to each other in a direction perpendicular to the direction of the stacks.
Potential Applications
This technology could be applied in various electronic devices such as smartphones, tablets, and computers to improve memory storage capabilities.
Problems Solved
This innovation helps enhance the performance and efficiency of semiconductor memory devices by incorporating different insulating films with specific compositions in the stacks.
Benefits
The use of insulating films with different compositions in the stacks can lead to increased data storage capacity, faster data access speeds, and improved overall performance of semiconductor memory devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance memory devices for consumer electronics, data centers, and other computing applications.
Possible Prior Art
One possible prior art for this technology could be the use of different insulating films in semiconductor memory devices to improve performance and efficiency. However, the specific combination of insulating films with nitrogen, oxygen, and hydrogen as described in this patent application may be a novel approach.
Unanswered Questions
How does the presence of nitrogen and oxygen in the insulating films affect the overall performance of the memory device?
The abstract mentions that the second insulating film contains nitrogen and the third insulating film contains nitrogen and at least one of oxygen or hydrogen. It would be interesting to know how these specific compositions impact the functionality of the memory device.
What are the potential challenges in manufacturing semiconductor memory devices with such intricate stack structures?
Creating memory devices with multiple insulating films and conductive films in precise arrangements can be a complex process. Understanding the challenges involved in manufacturing these devices could provide insights into the feasibility of mass production.
Original Abstract Submitted
A semiconductor memory device of an embodiment includes a first region having a first stack and a first pillar, and a second region having a second stack and a second pillar. The first stack comprises an alternate stack in a first direction of a plurality of first insulating films containing oxygen and a plurality of first conductive films. The first pillar comprises a semiconductor layer and extends in the first direction within the first stack. The second stack comprises a repeated stack in the first direction of the plurality of first insulating films, a plurality of second insulating films, and a plurality of third insulating films in the order of the first insulating film, the second insulating film, and the third insulating film. The second insulating film contains nitrogen. The third insulating film contains nitrogen and at least one of oxygen and hydrogen. The second pillar comprises a semiconductor layer and extends in the first direction within the second stack. The first region and the second region are adjacent to each other in a second direction intersecting the first direction.
