18457645. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Saori Matsushita of Yokkaichi Mie (JP)
Tomonari Shioda of Nagoya Aichi (JP)
Takanori Yamanaka of Yokkaichi Mie (JP)
Ryota Fujitsuka of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18457645 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract consists of a stacked body with alternating conductive and insulating layers, and a pillar extending through the body with memory cells at each intersection with the conductive layers. The pillar includes semiconductor, silicon oxynitride, silicon nitride, and silicon oxide layers, with specific hydrogen concentration in the silicon oxynitride layer.
- Explanation of the patent/innovation:
- Stacked body with alternating conductive and insulating layers - Pillar structure with memory cells at intersections with conductive layers - Specific layers in the pillar: semiconductor, silicon oxynitride, silicon nitride, silicon oxide - Controlled hydrogen concentration in the silicon oxynitride layer
- Potential applications of this technology:
- High-density memory devices - Improved data storage and retrieval speed - Enhanced reliability and durability of memory cells
- Problems solved by this technology:
- Increased memory capacity in a compact space - Reduced data access times - Enhanced data retention and reliability
- Benefits of this technology:
- Higher performance in semiconductor memory devices - Improved efficiency in data storage and retrieval - Extended lifespan of memory cells
- Potential commercial applications of this technology:
- Consumer electronics (smartphones, tablets, laptops) - Data centers and servers - Automotive electronics
- Possible prior art:
- Previous semiconductor memory devices with stacked structures and memory cells - Research on silicon oxynitride and silicon nitride layers in semiconductor devices
Questions: 1. How does the specific hydrogen concentration in the silicon oxynitride layer affect the performance of the memory cells? 2. Are there any potential drawbacks or limitations to the use of this technology in semiconductor memory devices?
Original Abstract Submitted
A semiconductor memory device includes: a stacked body in which a plurality of conductive layers and a plurality of insulating layers are stacked one by one alternately; and a pillar that extends in the stacked body in a stacking direction of the stacked body and includes a memory cell formed at each of intersections with the plurality of conductive layers, in which the pillar includes a semiconductor layer extending in the stacking direction, a silicon oxynitride layer covering a side wall of the semiconductor layer, a silicon nitride layer covering a side wall of the silicon oxynitride layer, and a silicon oxide layer covering a side wall of the silicon nitride layer, in which the silicon oxynitride layer has a hydrogen concentration of 1×10atm/cc or less in terms of average value.
