View source for 18454404. TEG CIRCUIT, SEMICONDUCTOR DEVICE, AND TEST METHOD OF THE TEG CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)

=TEG CIRCUIT, SEMICONDUCTOR DEVICE, AND TEST METHOD OF THE TEG CIRCUIT=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Cheongwon Lee of Suwon-si (KR)|Cheongwon Lee of Suwon-si (KR)]][[Category:Cheongwon Lee of Suwon-si (KR)]]

[[:Category:Gyosoo Choo of Suwon-si (KR)|Gyosoo Choo of Suwon-si (KR)]][[Category:Gyosoo Choo of Suwon-si (KR)]]

[[:Category:Youngwoo Park of Suwon-si (KR)|Youngwoo Park of Suwon-si (KR)]][[Category:Youngwoo Park of Suwon-si (KR)]]

[[:Category:Seunghoon Lee of Suwon-si (KR)|Seunghoon Lee of Suwon-si (KR)]][[Category:Seunghoon Lee of Suwon-si (KR)]]

[[:Category:Jinwoo Choi of Suwon-si (KR)|Jinwoo Choi of Suwon-si (KR)]][[Category:Jinwoo Choi of Suwon-si (KR)]]

==TEG CIRCUIT, SEMICONDUCTOR DEVICE, AND TEST METHOD OF THE TEG CIRCUIT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18454404 titled 'TEG CIRCUIT, SEMICONDUCTOR DEVICE, AND TEST METHOD OF THE TEG CIRCUIT

==Simplified Explanation==

The patent application abstract describes a test element group (TEG) circuit that includes a first pad for a test voltage, an amplifier, a variable resistor, and a gate driving circuit for a test transistor.

* The TEG circuit includes a first pad for applying a test voltage.
* An amplifier is connected to the first pad and a first terminal of a test transistor.
* A variable resistor is connected between the output terminal of the amplifier and the first terminal of the test transistor.
* A gate driving circuit supplies a gate voltage to the test transistor.

== Potential Applications ==
The technology described in this patent application could be applied in the field of semiconductor testing, specifically for testing transistors and other electronic components.

== Problems Solved ==
This technology helps in accurately testing transistors by providing a controlled test voltage and monitoring the response through the amplifier and variable resistor.

== Benefits ==
The benefits of this technology include improved accuracy in testing transistors, better control over test voltages, and potentially faster testing processes.

== Potential Commercial Applications ==
One potential commercial application of this technology could be in semiconductor manufacturing companies that require precise testing of transistors and other electronic components.

== Possible Prior Art ==
One possible prior art for this technology could be similar TEG circuits used in semiconductor testing equipment in the past.

=== Unanswered Questions ===

== How does this technology compare to existing transistor testing methods? ==
The article does not provide a direct comparison between this technology and existing transistor testing methods. It would be helpful to know the advantages or disadvantages of this technology compared to traditional testing methods.

== What are the specific parameters that can be measured using this TEG circuit? ==
The article does not specify the exact parameters that can be measured using this TEG circuit. It would be beneficial to understand the range of measurements and tests that can be conducted using this technology.


==Original Abstract Submitted==

An embodiment provides a test element group (TEG) circuit, including: a first pad configured for a test voltage to be applied; an amplifier including a first input terminal connected to the first pad, a second input terminal connected to a first terminal of a test transistor, and an output terminal electrically connected to the second input terminal; a variable resistor including one terminal connected to the output terminal of the amplifier and the other terminal connected to the first terminal of the test transistor; and a gate driving circuit that supplies a gate voltage to a gate of the test transistor.



[[Category:G01R31/26]]