18453654. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
Fumihito Tachibana of Nisshin-shi (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18453654 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a semiconductor substrate with a trench, a gate insulating film, a gate electrode, and an interlayer insulating film. Additionally, there is a connection surface that connects the upper surface of the semiconductor substrate to the side surface of the trench.
- The semiconductor substrate has a trench adjacent to its upper surface.
- Inside the trench, there is a gate insulating film and a gate electrode.
- An interlayer insulating film covers the gate electrode inside the trench.
- A connection surface connects the upper surface of the semiconductor substrate to the side surface of the trench.
- The connection surface is located below the upper surface of the semiconductor substrate.
- Potential Applications
- This technology can be used in the manufacturing of advanced semiconductor devices such as integrated circuits and microprocessors.
- Problems Solved
- Provides improved connectivity and insulation within the semiconductor device. - Helps in reducing signal interference and improving overall performance.
- Benefits
- Enhanced performance and reliability of semiconductor devices. - Better integration and miniaturization capabilities. - Improved signal transmission efficiency.
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate having a trench adjacent to an upper surface, a gate insulating film inside the trench, a gate electrode on the gate insulating film inside the trench, and an interlayer insulating film covering the gate electrode inside the trench. The semiconductor substrate has a connection surface that connects between the upper surface of the semiconductor substrate and a side surface of the trench and is located below the upper surface of the semiconductor substrate. An upper surface of the gate insulating film is located below the connection surface. An upper surface of the interlayer insulating film is located below the upper surface of the gate insulating film. A metal film is disposed to cover the upper surface of the semiconductor substrate, the connection surface, the upper surface of the gate insulating film, and the upper surface of the interlayer insulating film.
