18453483. SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME
Organization Name
Inventor(s)
Byounghoon Lee of Suwon-si (KR)
Musarrat Hasan of Sejong-si (KR)
Wandon Kim of Seongnam-si (KR)
Seungkeun Cha of Yongin-si (KR)
SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18453483 titled 'SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME
Simplified Explanation
The abstract describes a semiconductor device that includes various layers stacked on a channel, which is located on or in a substrate. These layers include an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer.
- The device includes a substrate, channel, source/drain pair, and gate structure.
- The gate structure consists of multiple layers stacked on the channel.
- The layers include an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer.
- The layers are stacked in a specific sequence.
- The device is a semiconductor device, which means it can control the flow of electrical current.
- The layers in the gate structure help in controlling the behavior of the device.
Potential Applications
- This technology can be used in various electronic devices that require precise control of electrical current flow.
- It can be applied in integrated circuits, microprocessors, memory devices, and other semiconductor-based devices.
Problems Solved
- The technology solves the problem of controlling the behavior of a semiconductor device by providing a specific sequence of layers in the gate structure.
- It addresses the need for a stable and reliable semiconductor device with improved performance.
Benefits
- The device offers improved control over the flow of electrical current.
- It provides stability and reliability in the operation of the semiconductor device.
- The technology can enhance the performance of electronic devices by optimizing the behavior of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a substrate, a channel on or in the substrate, a source/drain pair respectively on opposite ends of the channel, and a gate structure on the channel between the source/drain pair, wherein the gate structure includes an interfacial layer, a ferroelectric layer, a stabilization layer, an oxygen diffusion barrier layer, and a threshold voltage control layer that are sequentially stacked on the channel.
