18450239. MEMORY SYSTEM AND METHOD simplified abstract (Kioxia Corporation)

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MEMORY SYSTEM AND METHOD

Organization Name

Kioxia Corporation

Inventor(s)

Marie Takada of Yokohama Kanagawa (JP)

Masanobu Shirakawa of Chigasaki Kanagawa (JP)

Naomi Takeda of Yokohama Kanagawa (JP)

MEMORY SYSTEM AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18450239 titled 'MEMORY SYSTEM AND METHOD

Simplified Explanation

The abstract describes a patent application for a controller that acquires temperature detection values, converts voltage values, and reads data from memory cells based on the temperature detection values.

  • The controller acquires a first temperature detection value and performs an acquisition operation on a first storage area.
  • It converts a first voltage value into a second voltage value representing the read voltage in a temperature set value based on the first temperature detection value and records the second voltage value.
  • The acquisition operation involves determining whether memory cells are ON or OFF using the read voltages and acquiring the first voltage value for suppressing error bits.
  • The controller then acquires a second temperature detection value and converts the second voltage value into a third voltage value representing the read voltage in the second temperature detection value.
  • Data is read from the memory cells using the voltage indicated by the third voltage value.

Potential Applications

This technology could be applied in the development of more efficient and reliable memory storage systems, particularly in environments where temperature variations can impact performance.

Problems Solved

This technology addresses the issue of error bits in memory cells by using temperature detection values to optimize the read voltage, resulting in improved data retrieval accuracy.

Benefits

The benefits of this technology include enhanced data storage reliability, increased efficiency in data retrieval, and better performance in varying temperature conditions.

Potential Commercial Applications

One potential commercial application of this technology could be in the manufacturing of high-performance solid-state drives (SSDs) for use in data centers, servers, and other storage-intensive applications.

Possible Prior Art

One possible prior art for this technology could be existing patents related to temperature-sensitive memory systems or voltage optimization techniques in memory storage devices.

Unanswered Questions

How does this technology compare to existing memory storage solutions in terms of speed and reliability?

This article does not provide a direct comparison with existing memory storage solutions in terms of speed and reliability.

What are the potential limitations or challenges in implementing this technology on a larger scale?

The article does not address the potential limitations or challenges in implementing this technology on a larger scale, such as cost implications or compatibility issues with existing systems.


Original Abstract Submitted

According to an embodiment, a controller acquires a first temperature detection value and executes an acquisition operation on a first storage area. The controller converts a first voltage value into a second voltage value representing the read voltage in a temperature set value based on the first temperature detection value and records the second voltage value. The acquisition operation is an operation of determining, by using the read voltages, whether memory cells are ON or OFF and acquiring the first voltage value representing the read voltage for suppressing error bits. After that, the controller acquires a second temperature detection value and converts the second voltage value into a third voltage value representing the read voltage in the second temperature detection value. The controller reads data from the memory cells by using, as the read voltage, a voltage indicated by the third voltage value.