18448093. METHOD OF MANUFACTURING SEMICONDUCTOR IMAGE SENSOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
METHOD OF MANUFACTURING SEMICONDUCTOR IMAGE SENSOR
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chung-Lin Fang of Hsinchu (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448093 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR IMAGE SENSOR
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device with two types of light sensing units arranged on a substrate. The first type of units receives less radiation than the second type. Some of the second type units are placed adjacent to the first type units. Isolation structures are used to separate the different types of units and a reflective layer is placed above the first type units.
- The method involves placing two types of light sensing units on a substrate.
- The first type of units receives less radiation than the second type.
- Some of the second type units are placed next to the first type units.
- Isolation structures are used to separate the different types of units.
- A reflective layer is placed above the first type units.
Potential Applications
This technology has potential applications in various fields, including:
- Image sensors for digital cameras and smartphones.
- Optical communication devices.
- Medical imaging devices.
- Industrial automation and robotics.
Problems Solved
The technology addresses several problems in the manufacturing of semiconductor devices, such as:
- Efficiently detecting different levels of radiation.
- Minimizing interference between adjacent light sensing units.
- Improving the overall sensitivity and performance of the device.
- Enhancing the accuracy and quality of image and data capture.
Benefits
The use of this technology offers several benefits, including:
- Improved sensitivity and accuracy in detecting different levels of radiation.
- Enhanced performance and efficiency of the semiconductor device.
- Reduction in interference between adjacent light sensing units.
- Higher quality and resolution in image and data capture.
- Increased versatility and applicability in various industries.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes disposing a plurality of a first type of light sensing units on a substrate; and disposing a plurality of a second type of light sensing units arranged on the substrate. Each of the first type of light sensing units is operable to receive less radiation than each of the second type of light sensing units. At least one of the second type of light sensing units is adjacent to a portion of at least one of the first type of light sensing units. The method includes disposing a first isolation structure between one of the first type of light sensing units and one of the second type of light sensing units; and disposing a second isolation structure between the adjacent first type of light sensing units. The method includes disposing a reflective layer above the first type of light sensing units.
