18447539. CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Po-Hsien Cheng of Taichung City (TW)
Chi-Ming Yang of Hsinchu City (TW)
CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447539 titled 'CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE
Simplified Explanation
The patent application describes a method of reducing contact resistance and improving electrical performance in electronic devices by using a layer of carbon at a metal interface. This carbon layer can be made of graphite or graphene and is placed between different metal components in the device.
- The layer of carbon reduces contact resistance at the metal interface, improving electrical performance.
- It can also prevent heat transfer from one metal to another during deposition, resulting in more symmetric deposition of the second metal and reducing surface roughness.
- In some cases, the layer of carbon is etched before deposition of the second metal to further reduce contact resistance at the metal interface.
Potential Applications
- This technology can be applied in various electronic devices, such as integrated circuits, transistors, and other semiconductor devices.
- It can be used in the manufacturing of computer processors, memory chips, and other electronic components.
Problems Solved
- Contact resistance at metal interfaces can hinder the electrical performance of electronic devices.
- Uneven deposition of metal layers can lead to surface roughness and increased contact resistance.
Benefits
- Improved electrical performance of electronic devices.
- Reduced contact resistance at metal interfaces.
- More symmetric deposition of metal layers, resulting in reduced surface roughness.
Original Abstract Submitted
A layer of carbon (e.g., graphite or graphene) at a metal interface (e.g., between an MEOL interconnect and a gate contact or a source or drain region contact, between an MEOL contact plug and a BEOL metallization layer, and/or between BEOL conductive structures) is used to reduce contact resistance at the metal interface, which increases electrical performance of an electronic device. Additionally, in some implementations, the layer of carbon may help prevent heat transfer from a second metal to a first metal when the second metal is deposited over the first metal. This results in more symmetric deposition of the second metal, which reduces surface roughness and contact resistance at the metal interface. As an alternative, in some implementations, the layer of carbon is etched before deposition of the second metal in order to reduce contact resistance at the metal interface.
