18447479. SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME
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SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447479 titled 'SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME
Simplified Explanation
The patent application describes a substrate treating apparatus for plasma treatment, consisting of a process chamber, a substrate support, a showerhead, and a baffle.
- Process chamber configured for plasma treatment
- Substrate support in lower portion of chamber
- Showerhead in upper portion supplying process gas
- Baffle surrounding substrate support
- Substrate support acts as first electrode for plasma generation
- Showerhead and baffle act as second electrode
- Baffle has variable height, affecting area of second electrode
Potential Applications
- Semiconductor manufacturing
- Thin film deposition
- Surface modification processes
Problems Solved
- Uniform plasma treatment of substrates
- Controlling plasma generation for specific applications
- Enhancing adhesion and quality of thin films
Benefits
- Improved process efficiency
- Enhanced substrate treatment uniformity
- Increased control over plasma parameters
Original Abstract Submitted
A substrate treating apparatus includes a process chamber configured to perform plasma treatment, a substrate support in a lower portion of the process chamber and configured to support a substrate, a showerhead in an upper portion of the process chamber and configured to supply a process gas for the plasma treatment toward the substrate, and a baffle surrounding the substrate support. The substrate support functions as a first electrode for generating plasma, the showerhead and the baffle function as a second electrode for generating the plasma, the baffle has a variable height, and an area of the second electrode varies as a height of the baffle varies.
