18405160. MEMORY CELL STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 MEMORY CELL STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY CELL STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY CELL STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
MEMORY CELL STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18405160 titled 'MEMORY CELL STRUCTURE
Simplified Explanation
The memory device described in the patent application includes rectangular and circular/square shaped vias for Vss node connection, with the rectangular vias having a length/width of greater than 1.5 and the circular/square vias having a length/width of between approximately 0.8 and 1.2. The vias are placed on the Via0 and/or Via1 layer interfacing a first metal layer (e.g., M1), with the circular/square vias being coplanar with the rectangular vias.
- Rectangular and circular/square shaped vias for Vss node connection
- Rectangular vias have a length/width of greater than 1.5
- Circular/square vias have a length/width of between approximately 0.8 and 1.2
- Vias are placed on the Via0 and/or Via1 layer interfacing a first metal layer
- Circular/square vias are coplanar with rectangular vias
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved
The technology addresses the following issues:
- Efficient Vss node connection
- Space optimization in memory cells
- Enhanced performance of memory devices
Benefits
The benefits of this technology include:
- Improved functionality of memory cells
- Increased reliability of memory devices
- Enhanced signal integrity
Potential Commercial Applications
The technology has potential commercial applications in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of circular or square vias in memory devices for signal routing and connection purposes.
Unanswered Questions
How does the technology impact power consumption in memory devices?
The article does not provide information on the power consumption implications of using rectangular and circular/square shaped vias in memory devices.
What are the cost implications of implementing this technology in semiconductor manufacturing?
The article does not discuss the cost factors associated with incorporating rectangular and circular/square shaped vias in memory devices.
Original Abstract Submitted
A memory device including a rectangular shaped via for at least one Vss node connection. In some embodiments, the rectangular shaped via has a length/width of greater than 1.5. The rectangular shaped via may be disposed on the Via0 and/or Via1 layer interfacing a first metal layer (e.g., M1). The memory cell may also include circular/square shaped vias having a length/width of between approximately 0.8 and 1.2. The circular/square shaped vias may be coplanar with the rectangular shaped vias.
