18405099. PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yin-Kai Liao of Taipei City (TW)

Sin-Yi Jiang of Hsinchu City (TW)

Hsiang-Lin Chen of Hsinchu City (TW)

Yi-Shin Chu of Hsinchu City (TW)

Po-Chun Liu of Hsinchu City (TW)

Kuan-Chieh Huang of Hsinchu City (TW)

Jyh-Ming Hung of Dacun Township (TW)

Jen-Cheng Liu of Hsin-Chu City (TW)

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18405099 titled 'PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

Simplified Explanation

The present disclosure relates to an integrated chip with a substrate, first and second semiconductor materials, a passivation layer, doped regions, and a silicide.

• The integrated chip includes a substrate with a first semiconductor material.
• A second semiconductor material is on the first semiconductor material.
• A passivation layer is on the second semiconductor material.
• First and second doped regions extend through the passivation layer and into the second semiconductor material.
• A silicide is arranged within the passivation layer and along the tops of the doped regions.

Potential Applications

This technology could be used in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.

Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by enhancing the conductivity and reliability of the semiconductor materials used.

Benefits

The integration of different semiconductor materials and the use of a passivation layer and silicide result in enhanced electrical properties, leading to faster and more reliable integrated circuits.

Potential Commercial Applications

"Enhancing Semiconductor Performance in Integrated Circuits: Applications in Electronics Industry"

Possible Prior Art

One possible prior art could be the use of different semiconductor materials in integrated circuits to improve performance and reliability. Additionally, the use of passivation layers and silicides to enhance electrical properties may have been explored in previous patents or research studies.

How does this technology compare to existing integrated chip designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing integrated chip designs to evaluate the performance and efficiency improvements offered by this technology.

What are the specific electronic devices or applications that could benefit the most from this technology?

The article does not specify the specific electronic devices or applications that could benefit the most from the enhanced semiconductor performance in integrated circuits.

Original Abstract Submitted

The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.