18403495. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Shih-Cheng Chen of New Taipei City (TW)

Chun-Hsiung Lin of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18403495 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a device with various layers and structures, including an active region, gate structure, source/drain epitaxial structure, epitaxial layer, metal alloy layer, contact, and contact etch stop layer.

• The gate structure is positioned across the active region.
• The source/drain epitaxial structure is located over the active region and next to the gate structure.
• The epitaxial layer is situated over the source/drain epitaxial structure.
• The metal alloy layer is placed over the epitaxial layer.
• The contact is positioned over the metal alloy layer.
• The contact etch stop layer lines the sidewalls of the source/drain epitaxial structure.
• The metal alloy layer is spaced apart from the contact etch stop layer.

Potential Applications

This technology could be applied in the semiconductor industry for the development of advanced electronic devices.

Problems Solved

This innovation helps in enhancing the performance and efficiency of electronic devices by optimizing the layers and structures within the device.

Benefits

The benefits of this technology include improved device functionality, increased reliability, and potentially reduced power consumption.

Potential Commercial Applications

The potential commercial applications of this technology could be in the manufacturing of high-performance integrated circuits and other semiconductor devices.

Possible Prior Art

One possible prior art could be the use of similar layering techniques in semiconductor device fabrication processes.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements.

What are the specific materials used in each layer of the device and how do they contribute to its overall functionality?

The article does not delve into the specific materials used in each layer of the device and their individual contributions to the device's functionality.

Original Abstract Submitted

A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.