View source for 18403259. SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Cheoljin Cho of Hwaseong-si (KR)|Cheoljin Cho of Hwaseong-si (KR)]][[Category:Cheoljin Cho of Hwaseong-si (KR)]]

[[:Category:Jungmin Park of Seoul (KR)|Jungmin Park of Seoul (KR)]][[Category:Jungmin Park of Seoul (KR)]]

[[:Category:Hanjin Lim of Seoul (KR)|Hanjin Lim of Seoul (KR)]][[Category:Hanjin Lim of Seoul (KR)]]

[[:Category:Jaehyoung Choi of Hwaseong-si (KR)|Jaehyoung Choi of Hwaseong-si (KR)]][[Category:Jaehyoung Choi of Hwaseong-si (KR)]]

==SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18403259 titled 'SEMICONDUCTOR DEVICES INCLUDING LOWER ELECTRODES INCLUDING INNER PROTECTIVE LAYER AND OUTER PROTECTIVE LAYER

==Simplified Explanation==

The semiconductor device described in the patent application includes a landing pad on a substrate, a lower electrode with protective layers, a conductive layer, a supporter pattern, a dielectric layer, and an upper electrode.

* The outer protective layer of the lower electrode is made of titanium oxide.
* The conductive layer between the protective layers is composed of titanium nitride.
* The inner protective layer is made of titanium silicon nitride.
* The supporter pattern on the side surface of the lower electrode includes a supporter hole.
* The dielectric layer is present on the surface of both the lower electrode and the supporter pattern.
* The upper electrode is located on top of the dielectric layer.

== Potential Applications ==
The technology described in this patent application could be used in various semiconductor devices, such as memory chips, processors, and sensors.

== Problems Solved ==
This technology helps improve the performance and reliability of semiconductor devices by providing enhanced protection and support for the electrodes.

== Benefits ==
The use of protective layers and supporter patterns in the semiconductor device increases its durability, stability, and efficiency.

== Potential Commercial Applications ==
This innovative semiconductor technology could be applied in the manufacturing of advanced electronic devices for consumer electronics, automotive systems, and industrial equipment.

== Possible Prior Art ==
Prior art in semiconductor device manufacturing may include similar electrode structures with protective layers and supporter patterns, but the specific combination of materials and design features described in this patent application may be unique.

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor device designs in terms of performance and reliability? ===
The patent application provides detailed information about the structure and materials used in the semiconductor device, but it does not directly compare the performance and reliability of this technology to existing designs.

=== What are the potential challenges or limitations of implementing this technology in large-scale production? ===
While the patent application highlights the benefits of the technology, it does not address any potential challenges or limitations that may arise during the mass production of semiconductor devices using this design.


==Original Abstract Submitted==

A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode including an outer protective layer, a conductive layer between opposing sidewalls of the outer protective layer, and an inner protective layer between opposing sidewalls of the conductive layer, a first supporter pattern on a side surface of the lower electrode, the first supporter pattern including a supporter hole, a dielectric layer on a surface of each of the lower electrode and the first supporter pattern, and an upper electrode on the dielectric layer. The outer protective layer includes titanium oxide, the conductive layer includes titanium nitride, and the inner protective layer includes titanium silicon nitride. In a horizontal cross-sectional view, the outer protective layer has an arc shape that extends between the dielectric layer and the conductive layer.



[[Category:H01L23/528]]