18402957. LITHOGRAPHY MASK simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 LITHOGRAPHY MASK
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LITHOGRAPHY MASK - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LITHOGRAPHY MASK
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chien-Cheng Chen of Hsinchu County (TW)
Huan-Ling Lee of Hsinchu County (TW)
Ta-Cheng Lien of Hsinchu County (TW)
Chia-Jen Chen of Hsinchu County (TW)
Hsin-Chang Lee of Hsinchu County (TW)
LITHOGRAPHY MASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 18402957 titled 'LITHOGRAPHY MASK
Simplified Explanation
The patent application describes a mask for use in semiconductor lithography with a light-absorbing border surrounding the mask pattern.
- The mask includes a substrate, a mask pattern, and a light-absorbing border.
- The light-absorbing border is inset from at least two edges of the substrate to define a peripheral region.
- A first peripheral region extends from the outer perimeter of the light-absorbing border to a first edge of the substrate.
- A second peripheral region extends from the outer perimeter of the light-absorbing border to a second edge of the substrate.
- The first and second edges of the substrate are on opposite sides of the mask pattern.
Potential Applications
This technology can be applied in semiconductor manufacturing processes, specifically in lithography for creating intricate patterns on semiconductor wafers.
Problems Solved
This innovation helps to improve the accuracy and precision of lithography processes by reducing light scattering and improving the contrast of the mask pattern.
Benefits
- Enhanced resolution and pattern fidelity in semiconductor manufacturing. - Reduction of defects and errors in lithography processes. - Improved overall performance and efficiency in semiconductor device production.
Potential Commercial Applications
"Enhancing Lithography Processes in Semiconductor Manufacturing"
Possible Prior Art
There may be prior art related to the use of light-absorbing borders in lithography masks to improve pattern definition and accuracy.
Unanswered Questions
How does the light-absorbing border impact the overall efficiency of the lithography process?
The light-absorbing border helps to reduce light scattering and improve contrast, leading to better pattern definition and accuracy in the lithography process.
Are there any limitations or drawbacks to using a mask with a light-absorbing border?
While the light-absorbing border can improve pattern fidelity, it may also increase manufacturing costs and complexity. Further research is needed to assess any potential drawbacks of this technology.
Original Abstract Submitted
A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.
