18402859. Barrier-Free Approach for Forming Contact Plugs simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Barrier-Free Approach for Forming Contact Plugs
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Barrier-Free Approach for Forming Contact Plugs - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Barrier-Free Approach for Forming Contact Plugs
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sheng-Hsuan Lin of Zhubei City (TW)
Hung-Hsu Chen of Tainan City (TW)
Chih-Wei Chang of Hsinchu (TW)
Barrier-Free Approach for Forming Contact Plugs - A simplified explanation of the abstract
This abstract first appeared for US patent application 18402859 titled 'Barrier-Free Approach for Forming Contact Plugs
Simplified Explanation
The method described in the abstract involves etching a dielectric layer of a substrate to create an opening, forming a metal layer within the opening, performing an anneal process to create a source/drain region, conducting a plasma treatment process using hydrogen and nitrogen-containing gases to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the layer.
- Etch a dielectric layer to create an opening
- Form a metal layer within the opening
- Perform an anneal process to create a source/drain region
- Conduct a plasma treatment process using hydrogen and nitrogen-containing gases
- Deposit a metallic material on the silicon-and-nitrogen-containing layer
Potential Applications
This technology could be applied in the manufacturing of semiconductor devices, specifically in the formation of source/drain regions in transistors.
Problems Solved
This technology helps in creating precise and efficient source/drain regions in semiconductor devices, improving their performance and reliability.
Benefits
The method described allows for the formation of high-quality source/drain regions with improved electrical properties, leading to enhanced overall device performance.
Potential Commercial Applications
"Enhancing Semiconductor Device Performance with Advanced Source/Drain Region Formation"
Possible Prior Art
One possible prior art could be the use of different plasma treatment processes for semiconductor device fabrication.
Unanswered Questions
How does this method compare to traditional techniques in terms of cost and efficiency?
The article does not provide a comparison between this method and traditional techniques in terms of cost and efficiency.
Are there any limitations or challenges associated with implementing this technology on an industrial scale?
The article does not address any potential limitations or challenges associated with implementing this technology on an industrial scale.
Original Abstract Submitted
A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.
