18402018. FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Min-Hsiu Hung of Tainan City (TW)
Yi-Hsiang Chao of New Taipei City (TW)
Chih-Wei Chang of Hsinchu (TW)
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18402018 titled 'FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The method described in the patent application involves forming source/drain regions on opposing sides of a gate structure, which is situated over a fin and surrounded by a first dielectric layer. The process includes forming openings in the first dielectric layer to expose the source/drain regions, selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process, and filling the openings with an electrically conductive material.
- Source/drain regions are formed on opposing sides of a gate structure.
- The gate structure is situated over a fin and surrounded by a first dielectric layer.
- Openings are formed in the first dielectric layer to expose the source/drain regions.
- Silicide regions are selectively formed in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process.
- The openings are filled with an electrically conductive material.
Potential Applications
This technology could be applied in the semiconductor industry for the fabrication of advanced integrated circuits and microprocessors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the conductivity and reliability of the source/drain regions.
Benefits
The method allows for the precise formation of silicide regions on the source/drain regions, leading to improved electrical properties and overall device performance.
Potential Commercial Applications
"Enhancing Semiconductor Device Performance Through Silicide Formation"
Possible Prior Art
There may be prior art related to methods of forming silicide regions on source/drain regions in semiconductor devices using various deposition processes.
Unanswered Questions
How does this method compare to existing techniques in terms of cost-effectiveness and scalability?
The article does not provide information on the cost-effectiveness and scalability of this method compared to existing techniques.
Are there any potential challenges or limitations in implementing this method in large-scale semiconductor manufacturing processes?
The article does not address any potential challenges or limitations in implementing this method in large-scale semiconductor manufacturing processes.
Original Abstract Submitted
A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.
