18401815. Conductive Traces in Semiconductor Devices and Methods of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Conductive Traces in Semiconductor Devices and Methods of Forming Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Conductive Traces in Semiconductor Devices and Methods of Forming Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Conductive Traces in Semiconductor Devices and Methods of Forming Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chao-Wen Shih of Zhubei City (TW)
Sen-Kuei Hsu of Kaohsiung City (TW)
Conductive Traces in Semiconductor Devices and Methods of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18401815 titled 'Conductive Traces in Semiconductor Devices and Methods of Forming Same
Simplified Explanation
The method described in the abstract involves the formation of a dielectric layer over a contact pad of a device, followed by the formation of polymer layers and conductive lines over the dielectric layer. A photoresist is patterned to create openings for additional conductive lines, allowing for the physical contact between different portions of the conductive lines. Finally, a second polymer layer is formed to cover the conductive lines.
- Formation of dielectric layer over contact pad
- Formation of polymer layers and conductive lines
- Patterning of photoresist to create openings
- Physical contact between different portions of conductive lines
- Formation of second polymer layer
Potential Applications
This technology can be applied in the manufacturing of electronic devices, such as integrated circuits and semiconductor devices.
Problems Solved
This technology solves the problem of efficiently connecting different portions of conductive lines in a device, ensuring proper functionality and performance.
Benefits
The benefits of this technology include improved electrical connectivity, reduced signal interference, and overall enhanced device reliability.
Potential Commercial Applications
Potential commercial applications of this technology include the production of advanced electronic devices for various industries, such as telecommunications, consumer electronics, and automotive.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods in the fabrication of semiconductor devices and integrated circuits.
Unanswered Questions
How does this technology compare to traditional methods of connecting conductive lines in electronic devices?
This article does not provide a direct comparison between this technology and traditional methods, leaving the reader to wonder about the specific advantages and disadvantages of this approach.
Are there any limitations or challenges associated with the implementation of this method in large-scale manufacturing processes?
The article does not address any potential limitations or challenges that may arise when implementing this method in mass production, leaving room for further exploration and analysis in this area.
Original Abstract Submitted
A method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Wen Shih of Zhubei City (TW)
- Chen-Hua Yu of Hsinchu (TW)
- Han-Ping Pu of Taichung (TW)
- Hsin-Yu Pan of Taipei (TW)
- Hao-Yi Tsai of Hsinchu (TW)
- Sen-Kuei Hsu of Kaohsiung City (TW)
- H01L23/525
- H01L21/56
- H01L23/00
- H01L23/29
- H01L23/31
- H01L23/522
- H01L23/532
- H01L23/552