18401800. METHOD FOR FORMING AND USING MASK simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 METHOD FOR FORMING AND USING MASK
METHOD FOR FORMING AND USING MASK
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
METHOD FOR FORMING AND USING MASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 18401800 titled 'METHOD FOR FORMING AND USING MASK
Simplified Explanation
The method described in the abstract involves forming a semiconductor device by patterning various layers using photoresist and mask layers.
- Photoresist layer is formed over a mask layer.
- Photoresist layer is patterned.
- Oxide layer is formed on exposed surfaces of the patterned photoresist layer.
- Mask layer is patterned using the patterned photoresist layer as a mask.
- Target layer is patterned using the patterned mask layer.
Potential Applications
This technology can be applied in the manufacturing of semiconductor devices, integrated circuits, and other electronic components.
Problems Solved
This method helps in achieving precise patterning and alignment of different layers in semiconductor devices, leading to improved performance and reliability.
Benefits
The method allows for high-resolution patterning, which is essential for the miniaturization of electronic devices and the increase in device density on a chip.
Potential Commercial Applications
- Semiconductor manufacturing industry
- Electronics industry
Possible Prior Art
One possible prior art could be the use of similar patterning techniques in semiconductor manufacturing processes.
Unanswered Questions
How does this method compare to existing semiconductor patterning techniques?
This article does not provide a direct comparison with existing semiconductor patterning techniques.
What are the specific dimensions and tolerances that can be achieved with this method?
The article does not specify the exact dimensions and tolerances that can be achieved with this method.
Original Abstract Submitted
A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask. A target layer is patterned using the patterned mask layer a
