18400256. STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER
Organization Name
Inventor(s)
Sungwon Jeong of Suwon-si (KR)
Moonsang Kwon of Suwon-si (KR)
Younghoi Heo of Uijeongbu-si (KR)
STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18400256 titled 'STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER
Simplified Explanation
The storage device described in the abstract is a device that includes a non-volatile memory and a storage controller. The storage controller consists of a command and address generator, an error detection module, and an interface circuit. The command and address generator is responsible for generating commands and addresses for memory operations, as well as error detection signals. The error detection module generates error detection signals based on the commands and addresses. The interface circuit then transmits the commands, addresses, and error detection signals to the non-volatile memory.
- The storage device includes a non-volatile memory and a storage controller.
- The storage controller consists of a command and address generator, an error detection module, and an interface circuit.
- The command and address generator generates commands, addresses, and error detection signals.
- The error detection module generates error detection signals based on the commands and addresses.
- The interface circuit transmits the commands, addresses, and error detection signals to the non-volatile memory.
Potential Applications
The technology described in this patent application could be applied in various storage devices such as solid-state drives, USB flash drives, and memory cards.
Problems Solved
This technology helps in detecting communication errors in memory operations, ensuring data integrity and reliability in storage devices.
Benefits
The benefits of this technology include improved data reliability, error detection capabilities, and enhanced performance in storage devices.
Potential Commercial Applications
The potential commercial applications of this technology include data storage solutions for consumer electronics, industrial applications, and data centers.
Possible Prior Art
One possible prior art for this technology could be error detection mechanisms in storage devices such as parity checking and error correction codes.
Unanswered Questions
How does this technology compare to existing error detection mechanisms in storage devices?
This article does not provide a direct comparison between this technology and other error detection mechanisms in storage devices.
What are the specific memory operations that can be performed using this technology?
The article does not specify the exact memory operations that can be performed using this technology.
Original Abstract Submitted
A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a storage controller. The storage controller includes a command and address generator, an error detection module, and an interface circuit. The command and address generator generates a first command, an address, and a second command, the second command including an error detection signal for detecting a communication error in the first command and the address. The error detection module generates the error detection signal from the first command and the address. The interface circuit sequentially transmits the first command, the address, and the second command to the non-volatile memory. The first command indicates a type of a memory operation to be performed in the non-volatile memory, and the second command corresponds to a confirm command.
