18397700. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing methods of fabricating semiconductor devices?
- 1.11 What specific electronic devices could benefit the most from this technology?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18397700 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a fin-type pattern, a gate electrode, spacers, a capping structure, and an interlayer insulating film. The method of fabricating the device involves creating these components in a specific configuration to optimize performance.
- The device features a fin-type pattern extending in one direction, with a gate electrode extending in a different direction over the fin-type pattern.
- Spacers are present on the sidewalls of the gate electrode to provide additional support and insulation.
- A capping structure, consisting of two patterns, is placed on the gate electrode and spacers for further protection.
- An interlayer insulating film surrounds the spacers and capping structure, enhancing the overall durability and functionality of the device.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as smartphones, computers, and other consumer electronics.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by providing enhanced insulation and protection to critical components, reducing the risk of malfunctions and failures.
Benefits
The benefits of this technology include increased efficiency, durability, and overall performance of semiconductor devices, leading to better user experience and longer device lifespan.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-quality semiconductor devices for the electronics industry, catering to the growing demand for advanced and reliable electronic products.
Possible Prior Art
One possible prior art for this technology could be the use of similar capping structures and spacers in semiconductor devices to enhance their performance and durability.
Unanswered Questions
How does this technology compare to existing methods of fabricating semiconductor devices?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.
What specific electronic devices could benefit the most from this technology?
The article does not mention any specific electronic devices that could benefit the most from this technology, leaving the reader to speculate on potential applications in different industries.
Original Abstract Submitted
A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.
