18396302. SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Seung Jin Kim of Hwaseong-si (KR)

Sung Soo Yim of Hwasung-si (KR)

SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18396302 titled 'SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN

Simplified Explanation

The method of manufacturing a semiconductor device involves stacking a mold layer and a supporter layer on a substrate, creating capacitor holes, filling them with lower electrodes, forming a supporter mask pattern with mask holes, and patterning the supporter layer to create supporter holes.

  • Lower electrodes have a pillar shape and are located between the mold layer and supporter layer.
  • Mask holes are circular in shape and are positioned between four adjacent lower electrodes.

Potential Applications

The technology can be applied in the manufacturing of various semiconductor devices, such as memory chips, processors, and sensors.

Problems Solved

This method solves the problem of efficiently creating capacitor structures in semiconductor devices with precise control over the electrode placement and shape.

Benefits

The benefits of this technology include improved performance and reliability of semiconductor devices, increased manufacturing efficiency, and enhanced miniaturization capabilities.

Potential Commercial Applications

The technology can be utilized in the production of advanced electronic devices for various industries, including consumer electronics, telecommunications, and automotive.

Possible Prior Art

One possible prior art could be the use of photolithography and etching techniques to create capacitor structures in semiconductor devices.

What materials are used in the fabrication process?

The article does not specify the exact materials used in the fabrication process. However, common materials used in semiconductor manufacturing include silicon, silicon dioxide, and various metals for electrodes.

How does this method compare to traditional semiconductor fabrication techniques?

The article does not provide a direct comparison to traditional semiconductor fabrication techniques. However, it can be inferred that this method offers a more precise and efficient way of creating capacitor structures compared to conventional methods.


Original Abstract Submitted

A method of manufacturing a semiconductor device includes sequentially stacking a mold layer and a supporter layer on a substrate, forming a plurality of capacitor holes passing through the mold layer and supporter layer, forming a plurality of lower electrodes filling the capacitor holes, forming a supporter mask pattern having a plurality of mask holes on the supporter layer and the lower electrodes, and forming a plurality of supporter holes by patterning the supporter layer. Each of the plurality of lower electrodes has a pillar shape, and each of the mask holes is between four adjacent lower electrodes and has a circular shape.