18390246. SEMICONDUCTOR DEVICES WITH STACKED TRANSISTOR STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICES WITH STACKED TRANSISTOR STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES WITH STACKED TRANSISTOR STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the use of different materials in the barrier patterns impact the overall performance of the semiconductor device?
- 1.11 What are the specific electronic applications that could benefit the most from this technology?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICES WITH STACKED TRANSISTOR STRUCTURES
Organization Name
Inventor(s)
Jae Hyun Park of Hwaseong-si (KR)
Cheoljin Yun of Yongin-si (KR)
SEMICONDUCTOR DEVICES WITH STACKED TRANSISTOR STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18390246 titled 'SEMICONDUCTOR DEVICES WITH STACKED TRANSISTOR STRUCTURES
Simplified Explanation
The semiconductor device described in the abstract includes stacked lower and upper channel patterns on a substrate, lower and upper source/drain patterns, barrier patterns, and different materials used in the barrier patterns.
- Lower and upper channel patterns are stacked on a substrate in a perpendicular direction.
- Lower source/drain patterns are located on the substrate at the sides of the lower channel pattern.
- Upper source/drain patterns are stacked on the lower source/drain patterns at the sides of the upper channel pattern.
- A first barrier pattern separates the lower and upper source/drain patterns.
- A second barrier pattern separates the first barrier pattern and the upper source/drain patterns.
- The first barrier pattern is made of a first material, while the second barrier pattern is made of a second material.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as smartphones, computers, and other consumer electronics.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by enhancing the isolation and conductivity between different components within the device.
Benefits
The use of different materials in the barrier patterns helps in reducing interference and improving the overall functionality of the semiconductor device.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance integrated circuits, microprocessors, and memory chips for the electronics industry.
Possible Prior Art
One possible prior art could be the use of similar barrier patterns in semiconductor devices to improve performance and reliability.
Unanswered Questions
How does the use of different materials in the barrier patterns impact the overall performance of the semiconductor device?
The abstract does not provide specific details on how the choice of materials in the barrier patterns affects the functionality and efficiency of the semiconductor device.
What are the specific electronic applications that could benefit the most from this technology?
The abstract does not mention any specific electronic applications that could benefit significantly from the use of this semiconductor device technology.
Original Abstract Submitted
A semiconductor device includes a lower channel pattern and an upper channel pattern stacked on a substrate in a first direction perpendicular to a top surface of the substrate, lower source/drain patterns on the substrate and at a first side and a second side of the lower channel pattern, upper source/drain patterns stacked on the lower source/drain patterns and at a third side and a fourth side of the upper channel pattern, a first barrier pattern between the lower source/drain patterns and the upper source/drain patterns, and a second barrier pattern between the first barrier pattern and the upper source/drain patterns. The first barrier pattern includes a first material and the second barrier pattern includes a second material, wherein the first material and the second material are different.
