18379083. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

INTEGRATED CIRCUIT DEVICES

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Sungmoon Lee of Suwon-si (KR)

Sangcheol Na of Suwon-si (KR)

Sora You of Suwon-si (KR)

Kyoungwoo Lee of Suwon-si (KR)

Minchan Gwak of Suwon-si (KR)

Youngwoo Kim of Suwon-si (KR)

Jinkyu Kim of Suwon-si (KR)

Seungmin Cha of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18379083 titled 'INTEGRATED CIRCUIT DEVICES

Simplified Explanation

The integrated circuit device described in the abstract includes a substrate, semiconductor patterns, gate electrode, source/drain region, vertical power wiring layer, liner structure, first contact, and back wiring structure.

• Substrate with semiconductor patterns and gate electrode
• Source/drain region next to gate electrode
• Vertical power wiring layer with liner structure
• First contact connecting source/drain region and power wiring layer
• Back wiring structure on the second surface of the substrate

Potential Applications

The technology described in this patent application could be applied in various electronic devices such as smartphones, tablets, laptops, and other consumer electronics that require integrated circuits for processing and data storage.

Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by providing a more reliable and stable connection between different components within the circuit. It also helps in reducing signal interference and power consumption.

Benefits

The benefits of this technology include enhanced circuit performance, increased reliability, improved signal integrity, and reduced power consumption. Additionally, the design allows for more compact and efficient circuit layouts.

Potential Commercial Applications

• "Integrated Circuit Device with Vertical Power Wiring Layer and Liner Structure" - Optimizing Power Efficiency in Electronic Devices

Possible Prior Art

One possible prior art related to this technology could be the use of similar liner structures in integrated circuits to improve signal integrity and reduce interference. Additionally, previous patents may exist for vertical power wiring layers in integrated circuit devices.

Unanswered Questions

How does this technology compare to existing methods of connecting power wiring layers in integrated circuits?

This article does not provide a direct comparison to existing methods of connecting power wiring layers in integrated circuits. Further research or analysis would be needed to determine the specific advantages and disadvantages of this technology compared to other methods.

What impact could this technology have on the overall cost of manufacturing integrated circuits?

The article does not address the potential impact of this technology on the overall cost of manufacturing integrated circuits. It would be important to consider factors such as material costs, production efficiency, and scalability to assess the economic implications of implementing this technology.

Original Abstract Submitted

Provided is an integrated circuit device including a substrate, a plurality of semiconductor patterns on a first surface of the substrate, a gate electrode extending in a first direction and surrounding the semiconductor patterns, a source/drain region disposed on one side of the gate electrode, a vertical power wiring layer extending in a second direction, a liner structure including a first liner and a second liner, the first liner disposed on a lower portion of a sidewall of the vertical power wiring layer and including a first insulating material, and the second liner disposed on an upper portion of the sidewall of the vertical power wiring layer and including a second insulating material, a first contact disposed on the source/drain region and the vertical power wiring layer, and a back wiring structure disposed on a second surface of the substrate and electrically connected to the vertical power wiring layer.