18378874. SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE
Organization Name
Inventor(s)
Jongryeol Yoo of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18378874 titled 'SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE
Simplified Explanation
The semiconductor device described in the abstract includes an active region with two portions, an isolation region, stacked active layers, an epitaxial structure, a gate structure, and a gate spacer. The epitaxial structure consists of a blocking layer and a source/drain structure, with active blocking portions and bent portions contacting the active layers and gate spacer, respectively.
- Active region with two portions
- Isolation region on side surface
- Stacked active layers
- Epitaxial structure with blocking layer and source/drain structure
- Gate structure surrounding active layers
- Gate spacer on side surface
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Power electronics
Problems Solved
This technology helps in:
- Improving device performance
- Enhancing device reliability
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased efficiency
- Enhanced functionality
- Improved overall performance
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Automotive industry
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Similar semiconductor devices with stacked active layers and epitaxial structures
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to determine the specific advantages of this technology over existing solutions.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
This article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing processes could pose challenges that would need to be explored further.
Original Abstract Submitted
A semiconductor device includes an active region including a first portion and a second portion; an isolation region on a side surface of the active region; a plurality of active layers stacked and spaced apart from each other in a vertical direction on the first portion of the active region; an epitaxial structure disposed on the second portion of the active region, connected to the plurality of active layers, and overlapping the isolation region in the vertical direction; a gate structure extending by intersecting the active region and surrounding each of the plurality of active layers; and a gate spacer on a side surface of the gate structure. The epitaxial structure includes a blocking layer and a source/drain structure on the blocking layer. The blocking layer includes a plurality of active blocking portions contacting the plurality of active layers, respectively, and at least one first bent portion bent and extending from at least one of the plurality of active blocking portions and contacting the gate spacer.
