18378656. DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE simplified abstract (SAMSUNG DISPLAY CO., LTD.)

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DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE

Organization Name

SAMSUNG DISPLAY CO., LTD.

Inventor(s)

Jaybum Kim of Yongin-si (KR)

Myeongho Kim of Yongin-si (KR)

Yeonhong Kim of Yongin-si (KR)

Kyoungseok Son of Yongin-si (KR)

Seungjun Lee of Yongin-si (KR)

Seunghun Lee of Yongin-si (KR)

Junhyung Lim of Yongin-si (KR)

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18378656 titled 'DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE

Simplified Explanation

The disclosed display device includes a substrate with a display area and a component area, which includes a transmission area. It also includes a first thin-film transistor with a first semiconductor layer and a first gate electrode, where the first semiconductor layer is made of silicon. A first insulating layer covers the first gate electrode. Additionally, a second thin-film transistor is present, with a second semiconductor layer arranged on the first insulating layer and a second gate electrode. The second semiconductor layer is made of an oxide semiconductor. A second insulating layer covers the second gate electrode and has a transmission hole that overlaps the transmission area. An intermediate insulating layer is positioned between the first and second insulating layers. A conductive pattern is located between the intermediate insulating layer and the first insulating layer. Finally, a display element is arranged on the second insulating layer, and the transmission hole exposes the upper surface of the intermediate insulating layer.

  • The display device includes a substrate with separate display and component areas.
  • It utilizes thin-film transistors, with the first one having a silicon semiconductor layer and the second one having an oxide semiconductor layer.
  • Insulating layers cover the gate electrodes of both transistors, with an intermediate insulating layer between them.
  • A conductive pattern is present between the intermediate and first insulating layers.
  • The device includes a display element arranged on the second insulating layer, with a transmission hole exposing the upper surface of the intermediate insulating layer.

Potential Applications

  • This display device can be used in various electronic devices such as smartphones, tablets, and televisions.
  • It can be utilized in wearable technology, such as smartwatches and augmented reality glasses.
  • The device can find applications in automotive displays, including infotainment systems and instrument clusters.

Problems Solved

  • The display device solves the problem of integrating different types of thin-film transistors, such as those with silicon and oxide semiconductors, on a single substrate.
  • It addresses the challenge of providing a transmission hole that overlaps the transmission area while maintaining proper insulation between different layers.
  • The device solves the issue of achieving a compact and efficient display design by arranging the display element on the second insulating layer.

Benefits

  • The display device offers improved performance and functionality due to the use of different types of thin-film transistors.
  • It enables the creation of high-resolution displays with enhanced image quality.
  • The device allows for a more compact and lightweight design, making it suitable for portable electronic devices.
  • It provides a cost-effective solution for manufacturing displays with integrated thin-film transistors.


Original Abstract Submitted

A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

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