18369943. RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER simplified abstract (Samsung Electronics Co., Ltd.)

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RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Yousung Lee of Gyeonggi-do (KR)

Dongil Yang of Gyeonggi-do (KR)

Yohan Moon of Gyeonggi-do (KR)

Hyoseok Na of Gyeonggi-do (KR)

Taeyoung Kim of Gyeonggi-do (KR)

RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18369943 titled 'RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER

Simplified Explanation

The abstract describes a Radio Frequency (RF) circuit with a power amplifier, switching circuit, and diode for voltage control.

  • Power amplifier included in the RF circuit.
  • Switching circuit connects power amplifier to switch or terminating resistor based on output voltage.
  • First electrical path formed between power amplifier and switching circuit.
  • First diode connected to second electrical path for voltage control.

Potential Applications

The technology described in this patent application could be used in:

  • Wireless communication systems
  • Radar systems
  • Satellite communication systems

Problems Solved

This technology helps in:

  • Efficient power management in RF circuits
  • Voltage control for optimal performance
  • Protecting components from excessive voltage

Benefits

The benefits of this technology include:

  • Improved efficiency in RF circuits
  • Enhanced performance in communication systems
  • Protection against voltage spikes

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Telecommunications industry
  • Aerospace and defense sector
  • Electronics manufacturing companies

Possible Prior Art

One possible prior art for this technology could be:

  • Voltage regulation circuits in RF amplifiers

Unanswered Questions

How does this technology compare to existing voltage control methods in RF circuits?

This article does not provide a direct comparison with existing voltage control methods in RF circuits. It would be helpful to understand the specific advantages or disadvantages of this technology compared to others in the market.

What are the specific technical specifications and performance metrics of this RF circuit compared to traditional designs?

The article does not delve into the specific technical specifications and performance metrics of this RF circuit compared to traditional designs. Understanding the quantitative differences in terms of efficiency, power consumption, and signal quality would provide a clearer picture of the innovation's impact.


Original Abstract Submitted

According to an embodiment, a Radio Frequency (RF) circuit comprises: a power amplifier; a switching circuit configured to electrically connect the power amplifier to a first switch in case that an output voltage of the power amplifier does not exceed a threshold voltage and to electrically connect the power amplifier to a terminating resistor in case that the output voltage of the power amplifier exceeds the threshold voltage; a first electrical path formed between the power amplifier and the switching circuit; and a first diode connected to a second electrical path formed from a first point of the first electrical path to the switching circuit, the first diode connected between the first point and the switching circuit.