18369552. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Euichul Jeong of Suwon-si (KR)
Sang-Woon Lee of Suwon-si (KR)
Moonyoung Jeong of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18369552 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes various components such as word lines, back gate electrodes, active patterns, contact patterns, and back gate insulating patterns. The back gate insulating patterns consist of materials with different dielectric constants, which help in the operation and performance of the memory device.
- Word lines and back gate electrodes are key components of the semiconductor memory device.
- Active patterns and contact patterns are provided between the back gate electrode and word lines.
- Different materials with varying dielectric constants are used in the back gate insulating patterns.
Potential Applications
The technology described in the patent application could be used in:
- Memory devices
- Integrated circuits
- Semiconductor devices
Problems Solved
This technology helps in:
- Improving memory device performance
- Enhancing data storage capabilities
- Increasing efficiency of semiconductor devices
Benefits
The benefits of this technology include:
- Higher data storage capacity
- Faster data processing speeds
- Improved overall performance of semiconductor memory devices
Potential Commercial Applications
The technology could be applied in various commercial sectors such as:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of different dielectric materials in semiconductor devices to enhance performance and efficiency.
What are the specific materials used in the back gate insulating patterns?
The abstract mentions that the back gate upper insulating pattern includes a material with a first dielectric constant, while the back gate lower insulating pattern includes a material with a second dielectric constant that is greater than the first dielectric constant. This raises the question of what these specific materials are and how they contribute to the functioning of the memory device.
How do the active patterns and contact patterns interact with the back gate electrode and word lines?
The abstract mentions the presence of active patterns and contact patterns between the back gate electrode and word lines. It would be interesting to explore how these patterns interact with each other and how they contribute to the overall operation of the semiconductor memory device.
Original Abstract Submitted
A semiconductor memory device includes a substrate, a bit line on the substrate, word lines provided on the bit line and spaced apart in a first direction parallel to a top surface of the substrate, a back gate electrode provide between a pair of adjacent word lines among the word lines, active patterns provided between the back gate electrode and the pair of adjacent word lines, contact patterns respectively provided on the active patterns, a first back gate insulating pattern provided between the bit line and the back gate electrode, and a second back gate insulating pattern and a third back gate insulating pattern which are provided on the back gate electrode, where the back gate upper insulating pattern includes a material having a first dielectric constant and the back gate lower insulating pattern includes a material having a second dielectric constant that is greater than the first dielectric constant.
