18369236. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18369236 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes a unique contact plug design with a metal-semiconductor compound layer and a barrier layer. The contact plug features inclined surfaces and ends that protrude towards the gate structure, providing improved performance and reliability.
- Metal-semiconductor compound layer in contact plug
- Barrier layer with protruding ends
- Inclined surfaces in contact plug design
- Improved performance and reliability
Potential Applications
The innovative contact plug design can be applied in various semiconductor devices, such as transistors, diodes, and integrated circuits, to enhance their performance and reliability.
Problems Solved
This technology addresses the challenges related to contact resistance and reliability in semiconductor devices by introducing a novel contact plug design with improved features.
Benefits
The contact plug design offers enhanced performance, reduced contact resistance, and increased reliability in semiconductor devices, leading to improved overall device efficiency and longevity.
Potential Commercial Applications
The technology can be utilized in the manufacturing of advanced semiconductor devices for various industries, including electronics, telecommunications, and automotive, to enhance the performance and reliability of their products.
Possible Prior Art
One possible prior art could be the use of traditional contact plug designs in semiconductor devices, which may not offer the same level of performance and reliability as the innovative design described in this patent application.
=== What are the specific materials used in the metal-semiconductor compound layer and the barrier layer of the contact plug? The specific materials used in the metal-semiconductor compound layer and the barrier layer are not mentioned in the abstract. Further details on the materials and their properties would provide a more comprehensive understanding of the technology.
=== How does the positioning of the ends of the barrier layer contribute to the improved performance of the contact plug? The abstract mentions that the ends of the barrier layer protrude towards the gate structure at a level higher than the uppermost channel layer. Understanding the specific role of this positioning in enhancing the performance and reliability of the contact plug would provide valuable insights into the technology.
Original Abstract Submitted
A semiconductor device includes an active region on a substrate, a plurality of channel layers spaced apart from each other, a gate structure on the substrate, a source/drain region on at least one side of the gate structure, and a contact plug connected to the source/drain region. The contact plug includes a metal-semiconductor compound layer and a barrier layer on the metal-semiconductor compound layer. The contact plug includes a first inclined surface and a second inclined surface positioned where the metal-semiconductor compound layer and the barrier layer directly contact each other. The barrier layer includes first and second ends protruding towards the gate structure. The first and second ends are positioned at a level higher than an upper surface of an uppermost channel layer. An uppermost portion of the metal-semiconductor compound layer is positioned at a level higher than an upper surface of the source/drain region.
