18366776. REDUCED CROSS-TALK IN COLOR AND INFRARED IMAGE SENSOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
REDUCED CROSS-TALK IN COLOR AND INFRARED IMAGE SENSOR
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Keng-Yu Chou of Kaohsiung City (TW)
Cheng Yu Huang of Hsinchu (TW)
Chun-Hao Chuang of Hsinchu City (TW)
Wen-Hau Wu of New Taipei City (TW)
Wei-Chieh Chiang of Yuanlin Township (TW)
Chih-Kung Chang of Zhudong Township (TW)
REDUCED CROSS-TALK IN COLOR AND INFRARED IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366776 titled 'REDUCED CROSS-TALK IN COLOR AND INFRARED IMAGE SENSOR
Simplified Explanation
The patent application describes an image sensor device that includes two image sensor elements within a substrate. The device also includes an interconnect structure with conductive wires, conductive vias, and an absorption structure.
- The first image sensor element generates electrical signals from electromagnetic radiation in a specific range of wavelengths.
- The second image sensor element generates electrical signals from electromagnetic radiation in a different range of wavelengths.
- The second image sensor element is positioned next to the first image sensor element.
- The first image sensor element is located above the absorption structure and is spaced between the sidewalls of the absorption structure.
Potential applications of this technology:
- Digital cameras
- Smartphone cameras
- Surveillance cameras
- Medical imaging devices
Problems solved by this technology:
- Allows for capturing images in different ranges of wavelengths simultaneously.
- Provides a compact design by integrating multiple image sensor elements within a single device.
Benefits of this technology:
- Improved image quality by capturing a wider range of wavelengths.
- Compact and efficient design for image sensor devices.
- Enables the development of multi-spectral imaging applications.
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.
