18366175. PIXEL SENSOR INCLUDING REFRACTION STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
PIXEL SENSOR INCLUDING REFRACTION STRUCTURES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei-Lin Chen of Tainan City (TW)
Chun-Hao Chou of Tainan City (TW)
Kuo-Cheng Lee of Tainan City (TW)
PIXEL SENSOR INCLUDING REFRACTION STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366175 titled 'PIXEL SENSOR INCLUDING REFRACTION STRUCTURES
Simplified Explanation
The abstract describes a pixel sensor that includes a main deep trench isolation (DTI) structure and one or more sub-DTI structures in the substrate. This design aims to increase the quantum efficiency of the pixel sensor at large incident angles. The sub-DTI structures are located within the perimeter of the main DTI structure and above a photodiode. They are filled with an oxide material to increase light penetration and reduce reflections at the top surface of the substrate. This allows incident light to refract into the substrate and towards the photodiode.
- Pixel sensor with main DTI structure and sub-DTI structures in the substrate
- Sub-DTI structures located within the perimeter of the main DTI structure and above the photodiode
- Sub-DTI structures filled with oxide material to increase light penetration
- Reduces reflections at the top surface of the substrate
- Allows incident light to refract into the substrate and towards the photodiode
Potential Applications
- Digital cameras
- Smartphone cameras
- Surveillance cameras
- Medical imaging devices
- Scientific imaging devices
Problems Solved
- Increase quantum efficiency of pixel sensors at large incident angles
- Reduce reflections and improve light penetration into the photodiode
Benefits
- Improved image quality in low-light conditions
- Enhanced sensitivity to light at large incident angles
- Reduced noise and improved signal-to-noise ratio
- Increased overall performance of pixel sensors
Original Abstract Submitted
A pixel sensor may include a main deep trench isolation (DTI) structure and one or more sub-DTI structures in a substrate of the pixel sensor to increase the quantum efficiency of the pixel sensor at large incident angles. The one or more sub-DTI structures may be located within the perimeter of the main DTI structure and above a photodiode. The one or more sub-DTI structures may be configured to provide a path of travel for incident light into the photodiode from large incident angles in that the one or more sub-DTI structures may be filled with an oxide material to increase light penetration into the one or more sub-DTI structures. This may reduce reflections at a top surface of the substrate, thereby permitting incident light to refract into the substrate and toward the photodiode.
