18356324. SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Youngshik Yun of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356324 titled 'SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a peripheral circuit region and a memory cell region. The memory cell region consists of a stack structure with gate electrodes and interlayer insulating layers stacked vertically, along with a channel structure that penetrates through the stack structure. The gate electrodes are divided into three types: first gate electrodes, second gate electrodes on top of the first gate electrodes, and third gate electrodes on top of the second gate electrodes. The first gate electrodes have a certain thickness, the second gate electrodes have a greater thickness, and the third gate electrodes have a smaller thickness than the second gate electrodes.
- The patent application describes a semiconductor device with a unique memory cell region that includes a stack structure and a channel structure.
- The stack structure consists of gate electrodes and interlayer insulating layers stacked vertically.
- The gate electrodes are divided into three types: first, second, and third gate electrodes.
- The second gate electrodes have a greater thickness than the first gate electrodes.
- The third gate electrodes have a smaller thickness than the second gate electrodes.
Potential Applications:
- This technology can be applied in the field of semiconductor memory devices.
- It can be used in the development of high-density memory cells.
Problems Solved:
- The stack structure and channel structure provide improved performance and functionality to the semiconductor device.
- The different thicknesses of the gate electrodes allow for better control and manipulation of the memory cell region.
Benefits:
- The unique stack structure and channel structure enhance the efficiency and reliability of the semiconductor device.
- The different thicknesses of the gate electrodes enable more precise control of the memory cell region.
- The technology enables the development of high-density memory cells, leading to increased storage capacity.
Original Abstract Submitted
A semiconductor device includes a peripheral circuit region and a memory cell region. The memory cell region may include a stack structure including gate electrodes and interlayer insulating layers repeatedly and alternately stacked in a vertical direction, and a channel structure penetrating through the stack structure. The gate electrodes may include first gate electrodes, second gate electrodes on the first gate electrodes, and third gate electrodes on the second gate electrodes. Each of the first gate electrodes may have a first thickness. Each of the second gate electrodes may have a second thickness that is greater than the first thickness. Each of the third gate electrodes may have a third thickness that is smaller than the second thickness.
