18352191. FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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FABRICATING SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Sookyung Kim of Suwon-si (KR)

Chan Hwang of Suwon-si (KR)

Jeonghee Choi of Suwon-si (KR)

FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18352191 titled 'FABRICATING SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract of this patent application describes a method for fabricating a semiconductor device. The method involves the following steps:

1. A photoresist layer is formed on a lower structure with a certain thickness. 2. A portion of the photoresist layer is exposed, creating an exposed portion and a non-exposed portion. 3. Part of the photoresist layer is removed, resulting in a photoresist layer with a reduced thickness. 4. The exposed portion or the non-exposed portion of the photoresist layer with the reduced thickness is removed, forming a photoresist pattern.

  • The method involves forming and manipulating a photoresist layer to create a desired pattern on a semiconductor device.
  • The thickness of the photoresist layer is controlled by selectively removing a portion of it.
  • The exposed portion or the non-exposed portion of the photoresist layer is removed to form the final pattern.

Potential applications of this technology:

  • Semiconductor manufacturing: This method can be used in the fabrication of various semiconductor devices, such as integrated circuits, transistors, and memory chips.
  • Nanotechnology: The method can be applied in the production of nanoscale devices and structures.

Problems solved by this technology:

  • Precision patterning: The method allows for the precise formation of patterns on semiconductor devices, enabling the production of complex and miniaturized components.
  • Control of layer thickness: The ability to control the thickness of the photoresist layer ensures accurate and consistent patterning.

Benefits of this technology:

  • Improved device performance: The precise patterning achieved through this method can enhance the performance and functionality of semiconductor devices.
  • Cost-effective manufacturing: The method offers a cost-effective solution for producing semiconductor devices with high precision and reliability.
  • Versatile application: The technology can be applied to various semiconductor manufacturing processes, making it adaptable to different device designs and requirements.


Original Abstract Submitted

A method of fabricating a semiconductor device includes forming a photoresist layer on a lower structure to have a first thickness, exposing a portion of the photoresist layer to form an exposed portion and a non-exposed portion of the photoresist layer, removing a part of the photoresist layer to form a photoresist layer having a second thickness that smaller than the first thickness, and removing the exposed portion or the non-exposed portion of the photoresist layer having the second thickness to form a photoresist pattern.