18350614. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Sang Shin Jang of Suwon-si (KR)

Jong Min Baek of Suwon-si (KR)

Sun Ki Min of Suwon-si (KR)

Na rae Oh of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18350614 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The semiconductor device described in the abstract consists of multiple insulating layers and through vias connecting them in a specific configuration. Here is a simplified explanation of the patent application:

  • Lower insulating layer
  • Field insulating layer on the lower insulating layer
  • Upper insulating layer on the field insulating layer
  • First through via in the upper insulating layer
  • Second through via in the field insulating layer
  • Third through via in the lower insulating layer
  • Second through via connected to the first and third through vias
  • Width variations in the through vias

Potential Applications

The technology described in this patent application could be applied in the semiconductor industry for creating more efficient and compact devices with improved connectivity.

Problems Solved

This technology solves the problem of optimizing the layout and connectivity of semiconductor devices to enhance performance and functionality.

Benefits

The benefits of this technology include increased efficiency, improved signal transmission, and potentially reduced power consumption in semiconductor devices.

Potential Commercial Applications

  • "Enhancing Connectivity in Semiconductor Devices: Applications and Benefits"

Possible Prior Art

There may be prior art related to optimizing through via connections in semiconductor devices, but specific examples are not provided in the abstract.

Unanswered Questions

How does this technology compare to existing methods of optimizing through via connections in semiconductor devices?

The article does not provide a comparison with existing methods, leaving the reader to wonder about the unique advantages of this particular approach.

What specific industries or products could benefit the most from implementing this technology?

The abstract does not mention any specific industries or products that could benefit from this technology, leaving the reader to speculate on potential applications outside of the semiconductor industry.


Original Abstract Submitted

A semiconductor device comprising: a lower insulating layer; a field insulating layer on the lower insulating layer; an upper insulating layer on the field insulating layer; a first through via in the upper insulating layer; a second through via in the field insulating layer; and a third through via in the lower insulating layer, wherein the second through via is connected to the first and third through vias, and wherein a width of a top surface of the second through via is greater than a width of a bottom surface of the first through via, a width of a bottom surface of the second through via is greater than a width of a top surface of the third through via, and a width of a middle portion of the second through via is greater than the widths of the top surface and the bottom surface of the second through via.