18349460. NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Yeong Dong Mun of Suwon-si (KR)
Seong Hun Park of Suwon-si (KR)
Seong Jin Kim of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18349460 titled 'NON-VOLATILE MEMORY DEVICE, METHOD FOR MANUFACTURING THE NON-VOLATILE MEMORY DEVICE, AND ELECTRONIC SYSTEM INCLUDING THE NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The non-volatile memory device described in the patent application includes a substrate with a mold structure, gate electrodes, mold insulating films, an interlayer insulating film, a channel structure, and a through-contact. The through-contact consists of a first portion with a multi-grain conductive material and a second portion with a single grain conductive material.
- Substrate with mold structure, gate electrodes, and mold insulating films
- Channel structure connected to gate electrodes
- Through-contact with multi-grain and single grain conductive materials
Potential Applications
The technology described in this patent application could be applied in:
- Non-volatile memory devices
- Semiconductor manufacturing
Problems Solved
This technology helps address issues related to:
- Improving memory device performance
- Enhancing data storage capabilities
Benefits
The benefits of this technology include:
- Increased memory device efficiency
- Enhanced data retention capabilities
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Memory chip manufacturing industry
- Electronic device production
Possible Prior Art
One possible prior art for this technology could be the use of multi-grain conductive materials in through-contacts in semiconductor devices.
Unanswered Questions
1. How does the use of multi-grain conductive materials in through-contacts impact the overall performance of the non-volatile memory device? 2. Are there any specific challenges in manufacturing memory devices with through-contacts containing both multi-grain and single grain conductive materials?
Original Abstract Submitted
A non-volatile memory device including a substrate including a first area and a second area, a mold structure on the substrate, the mold structure including gate electrodes and mold insulating films alternately stacked on each other in a stepwise manner, an interlayer insulating film covering the mold structure, a channel structure on the first area, the channel structure extending through the mold structure and connected to the gate electrodes, and a through-contact on the second area and extending through the interlayer insulating film, the through-contact including a first portion in a first trench and a second portion in a second trench, the first portion including a liner film along a sidewall and a bottom surface of the first trench and a filling film on the liner film, wherein the filling film being a multi-grain conductive material, and the second portion being a single grain conductive material, may be provided.
