18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Wooyoung Yang of Suwon-si (KR)

Hyungjun Kim of Seoul (KR)

Hajun Sung of Suwon-si (KR)

Kiyeon Yang of Suwon-si (KR)

Changseung Lee of Suwon-si (KR)

Changyup Park of Suwon-si (KR)

Seung-min Chung of Seoul (KR)

Sangyoon Lee of Seoul (KR)

Inkyu Sohn of Seoul (KR)

METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18348846 titled 'METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER

Simplified Explanation

The memory element described in the patent application includes a substrate, a first electrode, a phase-change heterolayer, and a second electrode. The phase-change heterolayer consists of one or more confinement material layers and one or more phase-change material layers, with the confinement material layer containing a metal chalcogenide film.

• The memory element consists of a substrate, a first electrode, a phase-change heterolayer, and a second electrode.
• The phase-change heterolayer is made up of confinement material layers and phase-change material layers.
• The confinement material layer includes a metal chalcogenide film.

Potential Applications

• Non-volatile memory devices
• Data storage applications
• Electronic devices requiring memory elements

Problems Solved

• Improved data storage capabilities
• Enhanced performance of memory devices
• Increased reliability of memory elements

Benefits

• Higher data storage density
• Faster data access speeds
• Longer lifespan of memory devices

Original Abstract Submitted

A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.