18346977. METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING SEMI-AMORPHOUS POLYSILICON simplified abstract (Texas Instruments Incorporated)

METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING SEMI-AMORPHOUS POLYSILICON

Organization Name

Texas Instruments Incorporated

Inventor(s)

Damien Thomas Gilmore of Allen TX (US)

Jonathan P. Davis of Allen TX (US)

Azghar H Khazi-syed of Arlington TX (US)

Shariq Arshad of Allen TX (US)

Khanh Quang Le of Garland TX (US)

Kaneez Eshaher Banu of Plano TX (US)

Jonathan Roy Garrett of Garland TX (US)

Sarah Elizabeth Bradshaw of Dallas TX (US)

Eugene Clayton Davis of McKinney TX (US)

METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING SEMI-AMORPHOUS POLYSILICON - A simplified explanation of the abstract

This abstract first appeared for US patent application 18346977 titled 'METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING SEMI-AMORPHOUS POLYSILICON

Simplified Explanation

The patent application describes a microelectronic device that has a trench structure. The device is formed by creating a trench in a substrate and then depositing a seed layer made of amorphous dielectric material in the trench. Semi-amorphous polysilicon is then formed on top of the seed layer, with amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes can convert the semi-amorphous polysilicon into a polysilicon core.

• The microelectronic device has a trench structure.
• A seed layer made of amorphous dielectric material is deposited in the trench.
• Semi-amorphous polysilicon is formed on top of the seed layer.
• The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon.
• Subsequent thermal processes can convert the semi-amorphous polysilicon into a polysilicon core.

Potential applications of this technology:

• Microelectronic devices with trench structures, such as transistors or capacitors.
• Semiconductor manufacturing processes.

Problems solved by this technology:

• Provides a method for forming a trench structure in a microelectronic device.
• Allows for the formation of a polysilicon core in the trench through subsequent thermal processes.

Benefits of this technology:

• Enables the creation of complex microelectronic devices with trench structures.
• Provides a reliable and efficient method for forming the trench structure and the polysilicon core.
• Can be integrated into existing semiconductor manufacturing processes.

Original Abstract Submitted

A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.