18343231. DISPLAY DEVICE AND METHOD OF MANUFACTRING THE SAME simplified abstract (SAMSUNG DISPLAY CO., LTD.)

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DISPLAY DEVICE AND METHOD OF MANUFACTRING THE SAME

Organization Name

SAMSUNG DISPLAY CO., LTD.

Inventor(s)

Kyoung Won Lee of Yongin-si (KR)

Eun Hye Ko of Yongin-si (KR)

Yeon Hong Kim of Yongin-si (KR)

Eun Hyun Kim of Yongin-si (KR)

Sun Hee Lee of Yongin-si (KR)

DISPLAY DEVICE AND METHOD OF MANUFACTRING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18343231 titled 'DISPLAY DEVICE AND METHOD OF MANUFACTRING THE SAME

Simplified Explanation

The abstract describes a display device that includes various layers and regions, such as a light blocking layer, buffer layer, semiconductor layer, gate insulating layer, gate electrode, interlayer insulating layer, and a dummy gate electrode.

  • The light blocking layer is positioned on a substrate and has a first portion and a second portion with a greater thickness.
  • Above the light blocking layer is the buffer layer.
  • The semiconductor layer is positioned over the buffer layer and includes a source region, a channel region, and a drain region.
  • The gate insulating layer is positioned over the semiconductor layer.
  • The gate electrode is positioned over the gate insulating layer.
  • The interlayer insulating layer is positioned over the gate electrode and includes a first opening overlapping the second portion of the light blocking layer and a second opening overlapping the source region of the semiconductor layer.
  • The dummy gate electrode is positioned on a side surface of the first opening.

Potential applications of this technology:

  • Display devices: The described structure can be used in various types of display devices, such as LCDs, OLEDs, or microLEDs, to improve their performance and functionality.
  • Semiconductor devices: The semiconductor layer and its regions can be utilized in other semiconductor devices, such as transistors or integrated circuits, to enhance their performance.

Problems solved by this technology:

  • Light blocking: The light blocking layer helps to prevent unwanted light from affecting the display quality, improving contrast and image clarity.
  • Gate insulation: The gate insulating layer provides insulation between the gate electrode and the semiconductor layer, preventing leakage and ensuring proper device operation.
  • Interlayer insulation: The interlayer insulating layer helps to isolate different layers and regions, reducing interference and improving device reliability.

Benefits of this technology:

  • Enhanced display performance: The described structure helps to improve the overall performance of display devices, including image quality, contrast ratio, and response time.
  • Increased device reliability: The use of various insulating layers and proper isolation techniques enhances the reliability and lifespan of the display device.
  • Compatibility with different semiconductor devices: The semiconductor layer and its regions can be adapted for use in various semiconductor devices, providing versatility and compatibility with different applications.


Original Abstract Submitted

A display device includes a light blocking layer positioned on a substrate and including a first portion and a second portion having a thickness greater than a thickness of the first portion; a buffer layer positioned above the light blocking layer; a semiconductor layer positioned over the buffer layer and including a source region, a channel region, and a drain region; a gate insulating layer positioned over the semiconductor layer; a gate electrode positioned over the gate insulating layer; an interlayer insulating layer positioned over the gate electrode, and including a first opening overlapping the second portion of the light blocking layer in a plan view and a second opening overlapping the source region of the semiconductor layer in a plan view; and a dummy gate electrode positioned on a side surface of the first opening.