18340560. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18340560 titled 'THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE
Simplified Explanation
The abstract describes a three-dimensional (3D) ferroelectric memory device that includes multiple stacked gate electrodes, ferroelectric layers, intermediate electrodes, a gate insulating layer, and a channel layer. The widths of the intermediate electrodes are greater than the widths of the ferroelectric layers in contact with them.
- The device is a 3D ferroelectric memory device.
- It includes multiple gate electrodes stacked on a substrate.
- The gate electrodes are in contact with multiple ferroelectric layers.
- Intermediate electrodes are in contact with the ferroelectric layers.
- A gate insulating layer is in contact with the intermediate electrodes.
- A channel layer is in contact with the gate insulating layer.
- The widths of the intermediate electrodes are greater than the widths of the ferroelectric layers in contact with them.
Potential Applications:
- Memory devices: The 3D ferroelectric memory device can be used in various memory applications, such as non-volatile memory or random-access memory (RAM).
- Data storage: The device can be used for storing and retrieving data in electronic devices, such as computers, smartphones, and tablets.
- High-density memory: The 3D structure allows for increased memory density, enabling more data to be stored in a smaller space.
Problems Solved:
- Limited memory capacity: The 3D structure of the device allows for increased memory capacity compared to traditional two-dimensional memory devices.
- Data retention: Ferroelectric materials used in the device have the ability to retain data even when power is turned off, solving the problem of data loss in volatile memory.
Benefits:
- Increased memory density: The 3D structure allows for stacking multiple layers of memory, increasing the memory density and capacity.
- Non-volatile memory: The ferroelectric materials used in the device retain data even without power, providing non-volatile memory capabilities.
- Faster data access: The device can provide faster data access and retrieval compared to traditional memory devices, improving overall system performance.
Original Abstract Submitted
A three-dimensional (3D) ferroelectric memory device may include a plurality of gate electrodes stacked on a substrate, a plurality of ferroelectric layers in contact with the plurality of gate electrodes, a plurality of intermediate electrodes in contact with the plurality of ferroelectric layers, a gate insulating layer in contact with the plurality of intermediate electrodes, and a channel layer in contact with the gate insulating layer. Widths of the intermediate electrodes may be greater than widths of the ferroelectric layers in contact with the intermediate electrodes.
