18335680. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Keisuke Suda of Yokkaichi (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18335680 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes stacked interconnects, memory pillars, and different areas within the interconnect layers. Here are some key points to explain the innovation:
- Stacked interconnects with first and second interconnect layers
- First interconnect layer has first and second areas in a first direction
- Second interconnect layer is above the first layer in a second direction
- First memory pillar in the first area passing through the first interconnect layer
- Second memory pillar in the second area passing through both interconnect layers
Potential Applications
This technology could be applied in:
- High-performance computing systems
- Data storage devices
- Mobile devices
Problems Solved
This technology addresses issues such as:
- Increasing memory density
- Improving data transfer speeds
- Enhancing overall system performance
Benefits
The benefits of this technology include:
- Higher memory capacity
- Faster data access
- Improved efficiency in data processing
Potential Commercial Applications
This technology could be commercially benefit:
- Memory chip manufacturers
- Electronics companies
- Data center operators
Possible Prior Art
One possible prior art for this technology could be:
- Stacked memory structures in semiconductor devices
- Interconnect technologies in memory devices
Unanswered Questions
How does this technology impact power consumption in devices?
The article does not mention anything about the power consumption implications of this technology. It would be interesting to know if this innovation has any effects on the energy efficiency of devices.
Are there any limitations to the size or scale of memory devices using this technology?
The article does not provide information on any potential limitations in terms of size or scalability of memory devices utilizing this technology. It would be important to understand if there are any constraints in implementing this innovation in different device sizes or configurations.
Original Abstract Submitted
According to one embodiment, a semiconductor memory device includes: stacked interconnects including a first interconnect layer and a second interconnect layer, the first interconnect layer including a first area and a second area arranged in a first direction, the second interconnect layer being arranged above the first interconnect layer in a second direction intersecting the first direction, the second interconnect layer not including the first area and including the second area; a first memory pillar arranged in the first area and passing through the first interconnect layer in the second direction; and a second memory pillar arranged in the second area and passing through the first interconnect layer and the second interconnect layer in the second direction.
