18334304. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)

SEMICONDUCTOR DEVICE

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Tatsuya Kawase of Tokyo (JP)

Naoki Yoshimatsu of Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18334304 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract aims to reduce local temperature increases caused by voids in bonding materials. Here is a simplified explanation of the patent application:

• The semiconductor device includes a conductive member, a semiconductor element with a switching element, a bonding part on the upper surface of the semiconductor element, and a lead.
• The semiconductor element is held by the conductive member using a first bonding material.
• The bonding part is electrically connected to an electrode of the switching element (other than the gate electrode).
• The lead is bonded to the bonding part using a second bonding material.
• The bonding part and the second bonding material are located in a region that includes the center part of the upper surface of the semiconductor element.

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1. 1. 1. Potential Applications

This technology could be applied in various semiconductor devices to improve thermal management and prevent local temperature increases.

1. 1. 1. Problems Solved

This innovation addresses the issue of local temperature spikes caused by voids in bonding materials, which can affect the performance and reliability of semiconductor devices.

1. 1. 1. Benefits

- Enhanced thermal management - Improved reliability of semiconductor devices - Prevention of local temperature increases

1. 1. 1. Potential Commercial Applications

• Optimizing Thermal Management in Semiconductor Devices*

1. 1. 1. Possible Prior Art

There may be prior art related to thermal management techniques in semiconductor devices, but specific information on similar innovations is not provided in this abstract.

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1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing thermal management solutions in semiconductor devices?

This article does not provide a direct comparison with existing thermal management solutions in semiconductor devices. Further research or a detailed analysis would be needed to make a comparison.

1. 1. 1. 1. Are there any limitations or drawbacks associated with implementing this technology in semiconductor devices?

The abstract does not mention any limitations or drawbacks of this technology. Additional information or testing may be required to identify any potential limitations or challenges in practical applications.

Original Abstract Submitted

Provided is a semiconductor device reducing local increase in temperature caused by a void in a bonding material. A semiconductor device includes a conductive member, a semiconductor element, a bonding part, and a lead. The semiconductor element includes a switching element. The semiconductor element is held by the conductive member via a first bonding material. The bonding part is provided on an upper surface of the semiconductor element. The bonding part is electrically connected to an electrode of the switching element other than a gate electrode. The lead is bonded to the bonding part via a second bonding material. The bonding part and the second bonding material are provided in a region including a center part of the upper surface of the semiconductor element.