18323006. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jee Woong Kim of Suwon-si (KR)

Jin Kyu Kim of Suwon-si (KR)

Ho Jun Kim of Suwon-si (KR)

Jae Hyun Ahn of Suwon-si (KR)

So Ra You of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18323006 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract is designed to have simplicity in design and improved performance. Here are some key points to explain the patent/innovation:

• The semiconductor device includes a substrate with an electronic device on the frontside and a backside wiring structure on the backside.
• An interlayer insulating layer covers the electronic device, and at least one unit chain connects the electronic device with the backside wiring structure.
• The unit chain includes a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug connecting the through plug with the connection contact, and a second chain plug connected to the through plug.

1. 1. 1. Potential Applications

- This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and memory devices.

1. 1. 1. Problems Solved

- The design of this semiconductor device simplifies the wiring structure and improves overall performance by providing efficient connections between the electronic device and the backside wiring structure.

1. 1. 1. Benefits

- Improved performance and reliability of semiconductor devices. - Simplified design and manufacturing process. - Enhanced functionality and efficiency.

1. 1. 1. Potential Commercial Applications
         1. Enhancing Semiconductor Device Performance with Innovative Wiring Structure

1. 1. 1. Possible Prior Art

There may be prior art related to semiconductor devices with through-substrate connections or simplified wiring structures, but specific examples are not provided in the abstract.

1. 1. 1. 1. Unanswered Questions
         2. How does the unit chain design impact the overall performance of the semiconductor device?

The unit chain design allows for efficient connections between the electronic device and the backside wiring structure, potentially improving signal transmission and reducing power consumption.

1. 1. 1. 1. What are the potential limitations or challenges in implementing this technology in mass production?

Some potential challenges in mass production could include ensuring the reliability and durability of the through-plug connections, optimizing the manufacturing process for cost-effectiveness, and addressing any compatibility issues with existing semiconductor fabrication techniques.

Original Abstract Submitted

A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.