18312847. STATIC RANDOM-ACCESS MEMORY DEVICES WITH ANGLED TRANSISTORS simplified abstract (Intel Corporation)

STATIC RANDOM-ACCESS MEMORY DEVICES WITH ANGLED TRANSISTORS

Organization Name

Intel Corporation

Inventor(s)

Abhishek A. Sharma of Portland OR (US)

Sagar Suthram of Portland OR (US)

Kimberly L. Pierce of Beaverton OR (US)

Elliot Tan of Portland OR (US)

Pushkar Sharad Ranade of San Jose CA (US)

Shem Odhiambo Ogadhoh of West Linn OR (US)

Wilfred Gomes of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Swaminathan Sivakumar of Beaverton OR (US)

Tahir Ghani of Portland OR (US)

STATIC RANDOM-ACCESS MEMORY DEVICES WITH ANGLED TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18312847 titled 'STATIC RANDOM-ACCESS MEMORY DEVICES WITH ANGLED TRANSISTORS

Simplified Explanation

The patent application describes SRAM devices with angled transistors, which can increase the density of SRAM cells on semiconductor chips.

• The transistors in the SRAM cells are referred to as "angled" because their elongated semiconductor structure is built at an angle other than 0 degrees or 90 degrees with respect to the edges of the support structure or die.
• The angle can range between about 10 and 80 degrees with respect to at least one of the edges.
• Implementing angled transistors in SRAM cells can help increase the density of these cells on semiconductor chips, which have limited space.

Potential Applications

• Semiconductor chip manufacturing
• Memory devices
• Integrated circuits

Problems Solved

• Limited real estate on semiconductor chips for SRAM cells
• Increasing the density of SRAM cells without compromising performance

Benefits

• Increased density of SRAM cells on semiconductor chips
• Improved performance of SRAM devices
• Cost-effective manufacturing process

Original Abstract Submitted

SRAM devices with angled transistors, and related assemblies and methods, are disclosed herein. A transistor is referred to as “angled” if a longitudinal axis of an elongated semiconductor structure (e.g., a fin or a nanoribbon) based on which the transistor is built is at an angle other than 0 degrees or 90 degrees with respect to the edges of front or back faces of a support structure or a die on/in which the transistor resides, e.g., at an angle between about 10 and 80 degrees with respect to at least one of such edges. Implementing at least some of the transistors of SRAM cells as angled transistors may provide a promising way to increasing densities of SRAM cells on the limited real estate of semiconductor chips.