18301597. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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THREE-DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TRANSISTOR
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THREE-DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18301597 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TRANSISTOR
Simplified Explanation
The abstract describes a three-dimensional semiconductor device that includes a plate common source line, first and second word lines, a channel pattern, a ferroelectric layer, a bit line, and a source line.
- The device has a plate common source line, first and second word lines, and a channel pattern that define a vertical space.
- The ferroelectric layer is located between the channel pattern and the first and second word lines, with a portion also contacting the plate common source line.
- The bit line is in the vertical space and contacts the channel pattern, with a narrower width in a horizontal direction.
- The source line is spaced apart from the bit line in the vertical space, contacts the channel pattern, and has a wider width in the horizontal direction. The source line also has a contact portion inside the plate common source line.
Potential applications of this technology:
- Three-dimensional semiconductor devices can be used in various electronic devices such as smartphones, tablets, and computers.
- The ferroelectric layer can be utilized for non-volatile memory applications, allowing for data retention even when power is turned off.
Problems solved by this technology:
- Three-dimensional semiconductor devices provide increased integration density, allowing for more components to be packed into a smaller space.
- The use of a ferroelectric layer enables non-volatile memory functionality, eliminating the need for constant power supply to retain data.
Benefits of this technology:
- Improved performance and functionality of electronic devices due to increased integration density.
- Enhanced data storage capabilities with non-volatile memory functionality.
- Potential for reduced power consumption and improved energy efficiency.
Original Abstract Submitted
A three-dimensional semiconductor device includes a plate common source line, first and second word lines spaced apart from each other to at least partially define a vertical space therebetween, a channel pattern in the vertical space, a ferroelectric layer including a first portion between the channel pattern and the first word line, a second portion between the channel pattern and the second word line, and a third portion contacting the plate common source line, a bit line in the vertical space to contact the channel pattern and having a first width in a first horizontal direction, and a source line spaced apart from the bit line in the vertical space to contact the channel pattern, having a second width greater than the first width in the first horizontal direction, and having a source line contact portion inside the plate common source line.
