18301575. VERTICAL MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 VERTICAL MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL MEMORY DEVICE
Organization Name
Inventor(s)
VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18301575 titled 'VERTICAL MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract includes word line patterns stacked on a substrate, a channel structure, and first and second contact plugs extending in the vertical direction. The word line patterns are on the cell area and cell wiring area, extending to the cell wiring area parallel to the substrate's upper surface. The first contact plugs are on the cell wiring area, each electrically connected to a corresponding word line pattern and insulated from other word line patterns. The second contact plugs are on the through-hole wiring area.
- Word line patterns stacked on substrate
- Channel structure and contact plugs in vertical direction
- Different areas on substrate for cell, cell wiring, and through-hole wiring
- First contact plugs connected to word line patterns on cell wiring area
- Second contact plugs on through-hole wiring area
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Semiconductor manufacturing
- Data storage systems
Problems Solved
This technology helps in:
- Improving memory device efficiency
- Enhancing data storage capacity
- Streamlining semiconductor manufacturing processes
Benefits
The benefits of this technology include:
- Increased memory device performance
- Higher data storage density
- Enhanced reliability and durability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Computer hardware
- Data centers
Possible Prior Art
One possible prior art for this technology could be:
- Stacked memory devices with vertical channel structures
Unanswered Questions
How does this technology compare to existing memory device designs?
This article does not provide a direct comparison with existing memory device designs to showcase the advantages of the described technology.
What specific manufacturing processes are involved in creating this memory device?
The article does not delve into the detailed manufacturing processes involved in creating the memory device described in the patent application.
Original Abstract Submitted
A memory device may include word line patterns stacked on a substrate and spaced from each other in a vertical direction, a channel structure extending in the vertical direction, and first contact plugs and second contact plugs extending in the vertical direction. The substrate may include a cell area, a cell wiring area, and a through-hole wiring area. The word line patterns may be on the cell area and the cell wiring area and may extend to the cell wiring area in a direction parallel to an upper surface of the substrate. The first contact plugs may be on the cell wiring area and each may be electrically connected with a corresponding one of the word line patterns and insulated from remaining word line patterns other than the corresponding one of the word line patterns. The second contact plugs may be on the through-hole wiring area.
