18300975. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18300975 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a cell array structure with a vertical channel structure and a cell contact plug with specific dimensions.
- The cell array structure consists of a second substrate, first and second stack structures, a vertical channel structure, and a cell contact plug.
- The cell contact plug has a first pillar part and a first protrusion part with a specific width at different levels.
- The first width at the top surface of the first protrusion part is greater than the second width at the interface between the first and second stack structures.
Potential Applications
- Memory storage devices
- Semiconductor manufacturing
Problems Solved
- Efficient memory storage
- Improved semiconductor device performance
Benefits
- Higher memory capacity
- Enhanced device reliability
- Improved data transfer speeds
Original Abstract Submitted
A semiconductor memory device comprises a first substrate, a peripheral circuit structure, and a cell array structure including a cell array region and a cell array contact region. The cell array structure includes a second substrate, a stack structure including first and second stack structures, a vertical channel structure in the cell array region, and a cell contact plug in the cell array contact region. The cell contact plug includes a first pillar part and a first protrusion part. At the level of the top surface of the first protrusion part, a first width is given as a maximum diameter at an outer perimeter of the first protrusion part. At a level of an interface between the first and second stack structures, a second width is given as a maximum width of the vertical channel structure. The first width is greater than the second width.
