18295466. PLASMA PROCESSING APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Myeongsoo Shin of Suwon-si (KR)
PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18295466 titled 'PLASMA PROCESSING APPARATUS
Simplified Explanation
The abstract of this patent application describes a plasma processing apparatus that includes a wafer support fixture, an upper electrode, and a magnet assembly. The wafer support fixture is located in the chamber and is designed to support a wafer. The upper electrode is also located in the chamber and is spaced apart from the wafer support fixture. The magnet assembly is configured to apply a magnetic field into the chamber and consists of a plurality of first magnets and a plurality of second magnets arranged in an annular shape. The horizontal distance from the central axis of the chamber to each of the first magnets and each of the second magnets is less than the radius of the wafer.
- The plasma processing apparatus includes a wafer support fixture, upper electrode, and magnet assembly.
- The wafer support fixture supports the wafer, while the upper electrode is spaced apart from the fixture.
- The magnet assembly applies a magnetic field into the chamber and consists of first and second magnets arranged in an annular shape.
- The horizontal distance from the central axis to each magnet is less than the wafer's radius.
Potential applications of this technology:
- Semiconductor manufacturing: The plasma processing apparatus can be used in the fabrication of semiconductor devices, such as integrated circuits, by providing precise control over plasma etching or deposition processes.
- Thin film deposition: The apparatus can be utilized for depositing thin films on substrates, enabling the production of various electronic and optical devices.
- Surface modification: The magnetic field generated by the magnet assembly can be used to modify the surface properties of materials, such as enhancing adhesion or improving wettability.
Problems solved by this technology:
- Uniformity: The arrangement of the magnets in an annular shape and the specific distance from the central axis help to achieve a more uniform plasma distribution and processing across the wafer surface.
- Edge exclusion: By ensuring that the distance from the magnets to the central axis is less than the wafer's radius, the edge of the wafer is effectively excluded from the magnetic field, preventing any unwanted effects on the edge region.
Benefits of this technology:
- Enhanced process control: The plasma processing apparatus allows for better control and uniformity in plasma processing, resulting in improved device performance and yield.
- Increased productivity: The precise control over plasma processing enables faster and more efficient fabrication processes, leading to higher production throughput.
- Cost savings: The improved uniformity and edge exclusion reduce the need for rework or rejection of wafers, saving costs in the manufacturing process.
Original Abstract Submitted
A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.
