18258295. SOLID-STATE IMAGING DEVICE simplified abstract (Sony Semiconductor Solutions Corporation)

From WikiPatents
Jump to navigation Jump to search

SOLID-STATE IMAGING DEVICE

Organization Name

Sony Semiconductor Solutions Corporation

Inventor(s)

TAKEJIRO Ichiki of KUMAMOTO (JP)

SOLID-STATE IMAGING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18258295 titled 'SOLID-STATE IMAGING DEVICE

Simplified Explanation

The abstract describes a solid-state imaging device with a stacked structure including a first semiconductor layer with photoelectric conversion and charge accumulation sections, a second semiconductor layer with pixel transistors, a pixel separation section, and a shared coupling section.

  • The first semiconductor layer contains a photoelectric conversion section and an electric charge accumulation section for each pixel.
  • The second semiconductor layer includes pixel transistors for reading out signal charge from the electric charge accumulation section.
  • A pixel separation section partitions pixels from each other in the first semiconductor layer.
  • A shared coupling section, located between the first and second semiconductor layers, is in contact with multiple electric charge accumulation sections and provides three-dimensional coupling.

Potential Applications:

  • Digital cameras
  • Surveillance cameras
  • Medical imaging devices

Problems Solved:

  • Improved image quality
  • Enhanced signal readout efficiency
  • Reduction in noise levels

Benefits:

  • Higher resolution images
  • Lower noise levels
  • Improved overall performance of imaging devices


Original Abstract Submitted

A solid-state imaging device according to an embodiment of the present disclosure includes a first semiconductor layer and a second semiconductor layer that are stacked. The first semiconductor layer includes a photoelectric conversion section and an electric charge accumulation section for each of pixels. The electric charge accumulation section accumulates signal charge generated in the photoelectric conversion section. The second semiconductor layer includes a pixel transistor that reads out the signal charge of the electric charge accumulation section. This solid-state imaging device includes a pixel separation section and a shared coupling section. The pixel separation section is provided in the first semiconductor layer. The pixel separation section partitions a plurality of the pixels from each other. The shared coupling section is provided between the second semiconductor layer and the first semiconductor layer. The shared coupling section is provided across the pixel separation section. In addition, the shared coupling section is in contact with a plurality of the electric charge accumulation sections. Coupling between each of the electric charge accumulation sections and the shared coupling section includes three-dimensional coupling.

Retrieved from "http://wikipatents.org/index.php?title=18258295._SOLID-STATE_IMAGING_DEVICE_simplified_abstract_(Sony_Semiconductor_Solutions_Corporation)&oldid=35885"